Fairchild Semiconductor
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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RF1S30P05SM9A | Fairchild Semiconductor | TO-263AB | MOSFET -50V Single | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 50 V，闸/源击穿电压：+/- ... | ||||||
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RF1S30P06SM9A | Fairchild Semiconductor | TO-263AB | MOSFET -60V Single | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，闸/源击穿电压：+/- ... | ||||||
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RF1S40N10 | Fairchild Semiconductor | TO-262 | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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RF1S40N10LESM9A | Fairchild Semiconductor | TO-263AB | MOSFET 100V Single | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 1... | ||||||
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RF1S40N10SM9A | Fairchild Semiconductor | TO-263AB | MOSFET USE 512-FDB3682 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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RF1S4N100SM | Fairchild Semiconductor | TO-263AB | MOSFET TO-263 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：1000 V，闸/源击穿电压：+/- ... | ||||||
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RF1S50N06SM9A | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20... | ||||||
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RF1S640SM | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch Power MOSFET 200V/18a/0.180 Ohm | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：+/- 2... | ||||||
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RF1S640SM9A | Fairchild Semiconductor | TO-263AB | MOSFET USE 512-FQP19N20C | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：+/- 2... | ||||||
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RF1S70N06SM | Fairchild Semiconductor | TO-263AB | MOSFET TO-263 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20... | ||||||
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RF1S70N06SM9A | Fairchild Semiconductor | TO-263AB | MOSFET TO-263 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20... | ||||||
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RF1S9630SM9A | Fairchild Semiconductor | TO-263AB | MOSFET -200V Single | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 200 V，闸/源击穿电压：+/-... | ||||||
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RF1S9640SM9A | Fairchild Semiconductor | TO-263AB | MOSFET TO-263 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 200 V，闸/源击穿电压：+/-... | ||||||
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RFD10P03L | Fairchild Semiconductor | TO-220AB | MOSFET TO-251 P-Ch Power | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- ... | ||||||
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RFD10P03LSM | Fairchild Semiconductor | TO-252-3，DPak（2 引线 + 接片），SC-63 | MOSFET TO-252AA P-Ch Power | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- ... | ||||||
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RFD12N06RLE | Fairchild Semiconductor | I-PAK | MOSFET 60V/12a/0.135Ohm NCh Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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RFD12N06RLESM9A | Fairchild Semiconductor | TO-252-3，DPak（2 引线 + 接片），SC-63 | 301 | MOSFET 60V Single | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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RFD14N05 | Fairchild Semiconductor | TO-251-3 短引线，IPak，TO-251AA | MOSFET TO-251AA N-Ch Power | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/... | ||||||
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RFD14N05_Q | Fairchild Semiconductor | IPAK | MOSFET TO-251AA N-Ch Power | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 20... | ||||||
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RFD14N05L | Fairchild Semiconductor | TO-251-3 短引线，IPak，TO-251AA | MOSFET TO-251AA N-Ch Power | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/... | ||||||
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