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点击查看HGT1S7N60A4S9A参考图片 HGT1S7N60A4S9A Fairchild Semiconductor TO-263AB-3 IGBT 晶体管 600V N-Channel IGBT SMPS Series
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGT1S7N60B3DS9A参考图片 HGT1S7N60B3DS9A Fairchild Semiconductor TO-263AB-3 IGBT 晶体管 14A 600V UFS N-Ch
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+...
点击查看HGT1S7N60C3D参考图片 HGT1S7N60C3D Fairchild Semiconductor TO-220AB-3 IGBT 晶体管 Optocoupler Phototransistor
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGT1S7N60C3DS参考图片 HGT1S7N60C3DS Fairchild Semiconductor D2PAK(TO-263) IGBT 晶体管 7A 600V TF=275NS
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGT1S7N60C3DS9A参考图片 HGT1S7N60C3DS9A Fairchild Semiconductor D2PAK(TO-263) IGBT 晶体管 14a 600V N-Ch IGBT UFS Series
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
HGT4E20N60A4DS Fairchild Semiconductor TO-247-3 IGBT 晶体管 TO-268
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+...
点击查看HGTD1N120BNS9A参考图片 HGTD1N120BNS9A Fairchild Semiconductor TO-252AA 209 IGBT 晶体管 5.3a 1200v N-Ch IGBT NPT Series
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200...
HGTD3N60A4S Fairchild Semiconductor TO-252-3 IGBT 晶体管
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGTD3N60C3S9A参考图片 HGTD3N60C3S9A Fairchild Semiconductor TO-252AA IGBT 晶体管 6a 600V N-Ch IGBT UFS Series
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
HGTD7N60A4S Fairchild Semiconductor TO-252-3 IGBT 晶体管 TO-252
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+...
点击查看HGTD7N60C3S9A参考图片 HGTD7N60C3S9A Fairchild Semiconductor TO-252AA 2,173 IGBT 晶体管 14a 600V N-Ch IGBT UFS Series
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGTG10N120BND参考图片 HGTG10N120BND Fairchild Semiconductor TO-247-3 IGBT 晶体管 35A 1200V N-Ch
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200...
HGTG10N120BND_Q Fairchild Semiconductor TO-247-3 IGBT 晶体管 35A 1200V N-Ch
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:1200...
点击查看HGTG11N120CN参考图片 HGTG11N120CN Fairchild Semiconductor TO-247-3 IGBT 晶体管 43A 1200V N-Ch
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200...
点击查看HGTG11N120CND参考图片 HGTG11N120CND Fairchild Semiconductor TO-247-3 IGBT 晶体管 43A 1200V NCh w/Anti Parallel Hyprfst Dde
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200...
点击查看HGTG12N60A4参考图片 HGTG12N60A4 Fairchild Semiconductor TO-247-3 IGBT 晶体管 600V N-Channel IGBT SMPS Series
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGTG12N60A4D参考图片 HGTG12N60A4D Fairchild Semiconductor TO-247-3 IGBT 晶体管 600V N-Channel IGBT SMPS Series
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGTG12N60B3参考图片 HGTG12N60B3 Fairchild Semiconductor TO-247-3 IGBT 晶体管 12A 600V UFS N-Ch
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGTG12N60C3D参考图片 HGTG12N60C3D Fairchild Semiconductor TO-247-3 IGBT 晶体管 24a 600V IGBT UFS N-Channel
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ...
点击查看HGTG18N120BN参考图片 HGTG18N120BN Fairchild Semiconductor TO-247-3 IGBT 晶体管 54A 1200V N-Ch
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200...

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