图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
NCV8405STT1G |
ON Semiconductor |
TO-261-4,TO-261AA |
|
MOSFET SELF-PROTECTED FET |
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参数:制造商:ON Semiconductor,产品种类:MOSFET,晶体管极性:N-Channel,汲极/源极击穿电压:42 V,闸/源击穿电压:14 V,漏极连... |
|
NCV8405STT3G |
ON Semiconductor |
TO-261-4,TO-261AA |
|
MOSFET SELF-PROTECTED FET |
|
参数:制造商:ON Semiconductor,产品种类:MOSFET,晶体管极性:N-Channel,汲极/源极击穿电压:42 V,闸/源击穿电压:14 V,漏极连... |
|
NCV8406ASTT1G |
ON Semiconductor |
TO-261-4,TO-261AA |
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MOSFET 65V, SMARTFET |
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参数:制造商:ON Semiconductor,产品种类:MOSFET,包装形式:Reel,... |
|
NCV8406ASTT3G |
ON Semiconductor |
TO-261-4,TO-261AA |
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MOSFET 65V SMARTFET |
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参数:制造商:ON Semiconductor,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,电阻汲极/源极 RDS(导通):210 m... |
|
NCV8406DTRKG |
ON Semiconductor |
TO-252-3,DPak(2 引线 + 接片),SC-63 |
|
MOSFET 65V6A SINGLE N-CHANNEL |
|
参数:制造商:ON Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:65 V,漏极连续电流:7 ... |
|
NCV8440ASTT1G |
ON Semiconductor |
TO-261-4,TO-261AA |
1,434 |
MOSFET 2.6A, 52V N-CH, CLAM |
|
参数:制造商:ON Semiconductor,产品种类:MOSFET,包装形式:Reel,... |
|
NDD02N60Z-1G |
ON Semiconductor |
I-PAK |
|
MOSFET NFET IPAK 600V 2.2A 4.8R |
|
参数:制造商:ON Semiconductor,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:30 V,漏极连续电流:... |
|
NDD02N60ZT4G |
ON Semiconductor |
DPAK |
|
MOSFET NFET IPAK 600V 2.2A 4.8R |
|
参数:制造商:ON Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:... |
|
NDD03N50Z-1G |
ON Semiconductor |
TO-251-3 短引线,IPak,TO-251AA |
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MOSFET 500V 2.6A HVFET IPAK |
|
参数:制造商:ON Semiconductor,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:2.6... |
|
NDD03N50ZT4G |
ON Semiconductor |
DPAK |
|
MOSFET 500V 2.6A HVFET DPAK |
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参数:制造商:ON Semiconductor,包装形式:Reel,... |
|
NDD03N60Z-1G |
ON Semiconductor |
I-PAK |
|
MOSFET NFET IPAK 600V 2.6A 3.6R |
|
参数:制造商:ON Semiconductor,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:30 V,漏极连续电流:1.65 A,... |
|
NDD03N60ZT4G |
ON Semiconductor |
DPAK |
|
MOSFET NFET DPAK 2.6A 3.6R |
|
参数:制造商:ON Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:... |
|
NDD03N80Z-1G |
ON Semiconductor |
TO-251-3 短引线,IPak,TO-251AA |
|
MOSFET |
|
参数:制造商:ON Semiconductor,... |
|
NDD03N80ZT4G |
ON Semiconductor |
DPAK-3 |
|
MOSFET |
|
参数:制造商:ON Semiconductor,... |
|
NDD04N50Z-1G |
ON Semiconductor |
TO-251-3 短引线,IPak,TO-251AA |
|
MOSFET 600V 3A HV MOSFET IPAK |
|
参数:制造商:ON Semiconductor,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:3 A... |
|
NDD04N50ZT4G |
ON Semiconductor |
DPAK |
|
MOSFET 500V 3A HV MOSFET DPAK |
|
参数:制造商:ON Semiconductor,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:3 A... |
|
NDD04N60Z-1G |
ON Semiconductor |
I-PAK |
|
MOSFET NFET IPAK 600V 4A 1.8R |
|
参数:制造商:ON Semiconductor,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,漏极连续电流:4.1 A,电阻汲极/源极... |
|
NDD04N60ZT4G |
ON Semiconductor |
TO-252-3,DPak(2 引线 + 接片),SC-63 |
|
MOSFET NFET DPAK 600V 4A 1.8R |
|
参数:制造商:ON Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,漏极连续电流:4... |
|
NDD05N50Z-1G |
ON Semiconductor |
I-PAK |
|
MOSFET NFET IPAK 500V 5A 1.2OHM |
|
参数:制造商:ON Semiconductor,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续电流:... |
|
NDD05N50ZT4G |
ON Semiconductor |
DPAK |
|
MOSFET NFET IPAK 500V 5A 1.2OHM |
|
参数:制造商:ON Semiconductor,产品种类:MOSFET,RoHS:是,包装形式:Reel,... |