| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
PH1225AL,115 |
NXP Semiconductors |
SOT-1023,4-LFPAK |
|
MOSFET Single N-Channel 25V 100 A |
|
| 参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:100 A,电阻汲极/源极 RDS(导通):1.2 mOhms,配置... |
|
PH1330AL,115 |
NXP Semiconductors |
SOT-1023,4-LFPAK |
|
MOSFET Single N-Channel 30V 100 A |
|
| 参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:100 A,电阻汲极/源极 RDS(导通):1.8 mOhms,配置... |
|
PHN203 /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHN203,518 |
NXP Semiconductors |
8-SO |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHN210 /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHN210,118 |
NXP Semiconductors |
8-SO |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHN210T /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHN210T,118 |
NXP Semiconductors |
8-SO |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHD9NQ20T,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,漏极连续电流:8.7 A,电阻汲极/源极 ... |
|
PHD82NQ03LT,118 |
NXP Semiconductors |
TO-252-3,DPak(2 引线 + 接片),SC-63 |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:75 A,电阻汲极/源极 RD... |
|
PHD96NQ03LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:75 A,电阻汲极/源极 RD... |
|
PHD97NQ03LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET Trans MOSFET N-CH 25V 75A 3-Pin |
|
| 参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:75 A,电阻汲极/源极 RDS(导通):6.3 mOhms,配置:... |
|
PHD98N03LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:75 A,电阻汲极/源极 RDS(导通):5.9 mOhms,配置:... |
|
PHD78NQ03LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:75 A,电阻汲极/源极 RD... |
|
PHD66NQ03LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:66 A,电阻汲极/源极 RD... |
|
PHD71NQ03LT,118 |
NXP Semiconductors |
TO-252-3,DPak(2 引线 + 接片),SC-63 |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:75 A,电阻汲极/源极 RD... |
|
PHD55N03LTA,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:55 A,电阻汲极/源极 RDS(导通):14 mOhms,配置:S... |
|
PHD63NQ03LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:68.9 A,电阻汲极/源极 ... |
|
PHD38N02LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,漏极连续电流:44.7 A,电阻汲极/源极 ... |
|
PHD45N03LTA,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,漏极连续电流:40 A,电阻汲极/源极 RDS(导通):21 mOhms,配置:S... |