Toshiba
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Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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HN7G01FU-A | Toshiba | 两极晶体管 - BJT INCORRECT MOUSER P/N Ic=-400mA Id=50mA | ||||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,... | ||||||
HN7G01FU-A(T5L,F,T | Toshiba | 2850 | 两极晶体管 - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:PNP,集电极—基极电压 VCBO:- 15 V,集电极—... | ||||||
HN7G02FE(TE85L,F) | Toshiba | ES-6 | 3970 | 两极晶体管 - BJT Vceo=-50V Vds20V Ic=-100ma Id=50mA | ||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:PNP,集电极—基极电压 VCBO:- 50 V,集电极—... | ||||||
HN7G02FU(TE85L,F) | Toshiba | 两极晶体管 - BJT Vceo=-50V Vds=20V Ic=-100mA Id=50mA | ||||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,包装形式:Reel,工厂包装数量:3000,... | ||||||
HN7G03FU-B(TE85L,F | Toshiba | 两极晶体管 - BJT Vceo=-12V Vds=20V Ic=-400mA Id=100mA | ||||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,包装形式:Reel,工厂包装数量:3000,... | ||||||
HN7G04FU-A | Toshiba | 两极晶体管 - BJT INCORRECT MOUSER P/N 10K x 47Kohms | ||||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,... | ||||||
HN7G04FU-A(TE85L,F | Toshiba | ES-6 | 两极晶体管 - BJT Vceo=-12V Vceo=50V 10K x 47Kohms | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:PNP,集电极—基极电压 VCBO:- 15 V,集电极—... | ||||||
HN7G05FU(TE85L,F) | Toshiba | ES-6 | 2966 | 两极晶体管 - BJT Vceo=-50V Vds=20V Ic=-100ma Id=50mA | ||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:PNP,集电极—基极电压 VCBO:- 50 V,集电极—... | ||||||
HN7G06FE-A(TE85L,F | Toshiba | 2800 | 两极晶体管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,集电极—发射极最大电压 VCEO:- 12 V,包装形式:Reel,工厂包装数量:40... | ||||||
HN7G06FU-A(TE85L,F | Toshiba | ES-6 | 2950 | 两极晶体管 - BJT Vceo=-12V Vceo=50V 47K x 47Kohms | ||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:PNP,集电极—基极电压 VCBO:- 15 V,集电极—... | ||||||
HN7G08FE-A | Toshiba | 两极晶体管 - BJT INCORRECT MOUSER P/N Ic=-400mA IC=100mA | ||||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,... | ||||||
HN7G08FE-A(TE85L,F | Toshiba | ES-6 | 3996 | 两极晶体管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA | ||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:PNP,集电极—基极电压 VCBO:- 15 V,集电极—... | ||||||
HN7G09FE | Toshiba | 两极晶体管 - BJT INCORRECT MOUSER P/N Ic=100mA Id=100mA | ||||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,... | ||||||
HN7G09FE(TE85L,F) | Toshiba | ES-6 | 3992 | 两极晶体管 - BJT Vceo=50V Vds=30V Ic=100mA Id=100mA | ||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:NPN,集电极—基极电压 VCBO:50 V,集电极—发射... | ||||||
TPC6601(TE85L,F) | Toshiba | VS | 两极晶体管 - BJT PNP 50V 2A Transistor | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,封装形式:VS,包装形式:Reel,工厂包装数量:3000,... | ||||||
TPC6701(TE85L,F) | Toshiba | VS-6-6 | 两极晶体管 - BJT Transistor NPN DUAL 50V 1A | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,最大工作温度:+ 150 C,安装风格:SMD/SMT,封装形式:VS... | ||||||
TPC6901(TE85L,F) | Toshiba | VS | 两极晶体管 - BJT Transistor NPN PNP 50V 1A | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,封装形式:VS,包装形式:Reel,工厂包装数量:3000,... | ||||||
TPC6901(TE85L,F,M) | Toshiba | VS-6(2.9x2.8) | 两极晶体管 - BJT Transistor NPN/PNP 50V, 1A | |||
参数:Toshiba Semiconductor and Storage|卷带(TR)|-|停产|NPN,PNP|1A,700mA|50V|170mV @ 6mA,3... | ||||||
TPC6K01(TE85L,F) | Toshiba | VS-6 | 两极晶体管 - BJT Diode 400V 0.3A | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,封装形式:VS-6,包装形式:Reel,工厂包装数量:3000,... | ||||||
TPCP8701(TE85L,F) | Toshiba | PS | 两极晶体管 - BJT Transistor NPN Dual 50V 2A | |||
参数:制造商:Toshiba,产品种类:两极晶体管 - BJT ,RoHS:是,配置:Dual,晶体管极性:NPN,集电极—基极电压 VCBO:100 V,集电极—发... |
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