| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FDC6333C | Fairchild Semiconductor | SuperSOT?-6 | 27,345 | MOSFET 30V/-30V N/P | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：-... | ||||||
|
FDC6333C_Q | Fairchild Semiconductor | SSOT-6 | MOSFET 30V/-30V N/P | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... | ||||||
|
FDC633N | Fairchild Semiconductor | SuperSOT?-6 | MOSFET SSOT-6 N-CH 30V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC633N_F095 | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 30V 5.2A N-CH ENHANCEMENT MODE | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC634P | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | MOSFET SSOT-6 P-CH -20V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
|
FDC636P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET SSOT-6 P-CH -20V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
FDC636P_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET -20V -2.8A P-CH ENHANCEMENT MODE | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
|
FDC637AN_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET 2.5V N-CH POWERTRENCH | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
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|
FDC637BNZ | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | 900 | MOSFET 20V N-Channel 2.5V Spec PowerTrench | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
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FDC638APZ | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | MOSFET -20V P-Channel 2.5V PowerTrench MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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|
FDC638P | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | 5,848 | MOSFET SSOT-6 P-CH -20V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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FDC638P_Q | Fairchild Semiconductor | SSOT-6 | 7610 | MOSFET SSOT-6 P-CH -20V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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|
FDC6392S | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | MOSFET 20V P-Ch PowerTrench Integrated | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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|
FDC6392S_Q | Fairchild Semiconductor | SSOT-6 | MOSFET 20V P-Ch PowerTrench Integrated | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- ... | ||||||
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FDC6401N | Fairchild Semiconductor | SuperSOT?-6 | MOSFET Dual N-Ch 2.5V Spec Power Trench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
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FDC6401N_NL | Fairchild Semiconductor | SSOT-6 | MOSFET Dual N-Ch 2.5V PowerTrench MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
|
FDC6401N_Q | Fairchild Semiconductor | SSOT-6 | MOSFET Dual N-Ch 2.5V Spec Power Trench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
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FDC640P | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | 1,815 | MOSFET SSOT-6 P-CH -20V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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FDC640P_F095 | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 2.5V P-CH POWERTRENCH | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
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FDC6420C | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 20V/-20V N/P | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... | ||||||
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