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Advanced Semiconductor, Inc.

Advanced Semiconductor, Inc.

Advanced Semiconductor, Inc. (ASI) manufactures RF power transistors and microwave diodes. They are an ISO 9001 registered company and specialize in manufacturing obsolete and hard-to-find components for both replacement purposes and new designs. Their line of RF power transistors primarily replaces those from Motorola, Philips, and SGS Thomson. Their line of microwave diodes primarily replaces those from HP, M/A-COM, Alpha, and Loral/Frequency sources.Advanced Semiconductor has a fundamental commitment to customer service and will always do our best to ensure that your needs are met.
图片 型号 品牌 封装 数量 描述 PDF资料
ASMA202 Advanced Semiconductor, Inc. 射频双极电源晶体管 50 Ohm
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,包装形式:Bulk,...
ASMA203 Advanced Semiconductor, Inc. 射频双极电源晶体管 50 Ohm
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,包装形式:Bulk,...
ASMA301 Advanced Semiconductor, Inc. 射频双极电源晶体管 1-1000MHz Gain Block NF=6.5dB Max. 50 Ohm
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,包装形式:Bulk,...
ASMA601 Advanced Semiconductor, Inc. 射频双极电源晶体管 50 Ohm
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,包装形式:Bulk,...
AUNA202 Advanced Semiconductor, Inc. 射频双极电源晶体管 50 Ohm
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,包装形式:Bulk,...
SD1013-03 Advanced Semiconductor, Inc. M113 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h...
点击查看SD1015-06参考图片 SD1015-06 Advanced Semiconductor, Inc. M135 5 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:35,最大工作频率:150 MH...
SD1143-01 Advanced Semiconductor, Inc. M113 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h...
SD1224-02 Advanced Semiconductor, Inc. M113 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h...
点击查看SD1274-01参考图片 SD1274-01 Advanced Semiconductor, Inc. M113 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:20,最大工作频率:175 MH...
点击查看SD1275-01参考图片 SD1275-01 Advanced Semiconductor, Inc. M113 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h...
点击查看SD1485参考图片 SD1485 Advanced Semiconductor, Inc. M175 20 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single,直流集电极/Base Gain hfe Min:20,最大工...
点击查看SD1492参考图片 SD1492 Advanced Semiconductor, Inc. M175 5 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:15,最大工作频率:860 MH...
点击查看SD1477参考图片 SD1477 Advanced Semiconductor, Inc. M111 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:10,最大工作频率:175 MH...
点击查看SD1480参考图片 SD1480 Advanced Semiconductor, Inc. M111 8 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:20,最大工作频率:175 MH...
点击查看SD1458参考图片 SD1458 Advanced Semiconductor, Inc. M111 10 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h...
点击查看SD1446参考图片 SD1446 Advanced Semiconductor, Inc. M113 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h...
点击查看SD1407参考图片 SD1407 Advanced Semiconductor, Inc. SOT-123 318 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:10,最大工作频率:30 MHz...
点击查看TP9383参考图片 TP9383 Advanced Semiconductor, Inc. M177 50 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:20,最大工作频率:108 MH...
点击查看TPV595A参考图片 TPV595A Advanced Semiconductor, Inc. 5 射频双极电源晶体管 RF Transistor
参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:10,最大工作频率:860 MH...

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