图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
BLF6G15L-250PBRN,1 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 RF Power Transistor | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.47GHz ~ 1.51GHz|18.5dB|28 V|64A|-|1.41 A|60W|... | ||||||
BLF6G15L-250PBRN:1 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | |||
参数:Ampleon USA Inc.|卷带(TR)|-|停产|LDMOS|-|1.47GHz ~ 1.51GHz|18.5dB|28 V|64A|-|1.41 A|... | ||||||
BLF6G15L-40BRN,112 | NXP Semiconductors | CDFM6 | 射频MOSFET电源晶体管 SINGLE 65V 11A 4.3S | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|双,共源|1.47GHz ~ 1.51GHz|22dB|28 V|11A|-|330 mA|2.5... | ||||||
BLF6G15L-40BRN,118 | NXP Semiconductors | CDFM6 | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | |||
参数:Ampleon USA Inc.|卷带(TR)|-|停产|LDMOS|双,共源|1.47GHz ~ 1.51GHz|22dB|28 V|11A|-|330 mA... | ||||||
BLF6G15L-40RN,112 | NXP Semiconductors | SOT1135A | 射频MOSFET电源晶体管 Pwr LDMOS transistor transistor | |||
参数:制造商:NXP,RoHS:是,配置:Single,晶体管极性:N-Channel,频率:1.45 GHz to 1.55 GHz,增益:21.5 dB,输出功率... | ||||||
BLF6G15L-40RN,118 | NXP Semiconductors | SOT1135A | 射频MOSFET电源晶体管 Pwr LDMOS transistor transistor | |||
参数:制造商:NXP,RoHS:是,配置:Single,晶体管极性:N-Channel,频率:1.45 GHz to 1.55 GHz,增益:21.5 dB,输出功率... | ||||||
BLF6G15L-500H,112 | NXP Semiconductors | SOT539A | 射频MOSFET电源晶体管 LDMOS TRANS DIGITAL 1.5 GHZ | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|双,共源|1.45Ghz ~ 1.49GHz|16dB|50 V|45A|-|1.3 A|65W|... | ||||||
BLF6G15LS-250PBRN, | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 RF Power Transistor | |||
参数:Ampleon USA Inc.|托盘|-|停产|-|-|1.47GHz ~ 1.51GHz|18.5dB|28 V|64A|-|1.41 A|60W|65 V... | ||||||
BLF6G15LS-250PBRN: | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 RF MOSFET POWER RF POWER TRANSISTOR | |||
参数:Ampleon USA Inc.|卷带(TR)|-|停产|-|-|1.47GHz ~ 1.51GHz|18.5dB|28 V|64A|-|1.41 A|60W|... | ||||||
BLF6G15LS-40RN,112 | NXP Semiconductors | CDFM2 | 射频MOSFET电源晶体管 Pwr LDMOS transistor transistor | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.48GHz ~ 1.51GHz|22.5dB|28 V|-|-|375 mA|2.5W|6... | ||||||
BLF6G15LS-40RN,118 | NXP Semiconductors | SOT1135B | 射频MOSFET电源晶体管 Pwr LDMOS transistor transistor | |||
参数:制造商:NXP,RoHS:是,配置:Single,晶体管极性:N-Channel,频率:1.45 GHz to 1.55 GHz,增益:21.5 dB,输出功率... | ||||||
BLF6G15LS-500H,112 | NXP Semiconductors | SOT539B | 射频MOSFET电源晶体管 LDMOS TRANS DIGITAL 1.5 GHZ | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|双,共源|1.45Ghz ~ 1.49GHz|16dB|50 V|45A|-|1.3 A|65W|... | ||||||
BLF6G20-110 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 LDMOS TNS | |||
参数:制造商:NXP,产品种类:射频MOSFET电源晶体管,RoHS:是,配置:Single,晶体管极性:N-Channel,汲极/源极击穿电压:65 V,漏极连续电... | ||||||
BLF6G20-110,112 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 LDMOS TNS | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.93GHz ~ 1.99GHz|19dB|28 V|29A|-|900 mA|25W|65... | ||||||
BLF6G20-180PN,112 | NXP Semiconductors | SOT539A | 射频MOSFET电源晶体管 Trans MOSFET N-CH 65V 5-Pin | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|双,共源|1.8GHz ~ 1.88GHz|18dB|32 V|-|-|1.6 A|50W|65 ... | ||||||
BLF6G20-180RN,112 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 TRANSISTOR PWR LDMOS | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.93GHz ~ 1.99GHz|17.2dB|30 V|49A|-|1.4 A|40W|6... | ||||||
BLF6G20-230PRN | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 230W, 1800-2000MHz | |||
参数:制造商:NXP,产品种类:射频MOSFET电源晶体管,RoHS:是,配置:Dual Common Source,晶体管极性:N-Channel,汲极/源极击穿电... | ||||||
BLF6G20-230PRN,112 | NXP Semiconductors | SOT539A | 射频MOSFET电源晶体管 TRANSISTOR PWR LDMOS | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|双,共源|1.8GHz ~ 1.88GHz|17.5dB|28 V|-|-|2 A|65W|65 ... | ||||||
BLF6G20-230PRN,118 | NXP Semiconductors | SOT539A | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | |||
参数:Ampleon USA Inc.|卷带(TR)|-|停产|LDMOS|双,共源|1.8GHz ~ 1.88GHz|17.5dB|28 V|-|-|2 A|65W... | ||||||
BLF6G20-40,112 | NXP Semiconductors | CDFM2 | 射频MOSFET电源晶体管 TRANSISTOR PWR LDMOS | |||
参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.8GHz ~ 1.88GHz|18.8dB|28 V|13A|-|360 mA|2.5W|... |
67/82 首页 上页 [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] 下页 尾页
© 2010 IC邮购网 icyougou.com版权所有