图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
PHW80NQ10T,127 | NXP Semiconductors | TO-247-3 | MOSFET N-CH TRENCH 100V 80A | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续... | ||||||
PHX14NQ20T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET RAIL PWR-MOS | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:7.6 A,电阻汲极/源极 RD... | ||||||
PHX18NQ11T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET TRENCH-100 | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:110 V,闸/源击穿电压:+/- 20 V,漏极连续电流:12.5 A,电阻汲极/源极 R... | ||||||
PHX18NQ20T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET RAIL PWR-MOS | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:8.2 A,电阻汲极/源极 RD... | ||||||
PHX20N06T | NXP Semiconductors | TO-220F | MOSFET RAIL PWR-MOS | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,漏极连续电... | ||||||
PHX20N06T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET RAIL PWR-MOS | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,漏极连续电流:12.9 A,电阻汲极/源极 RD... | ||||||
PHX23NQ10T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET RAIL PWR-MOS | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:13 A,电阻汲极/源极 RDS... | ||||||
PHX23NQ11T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET TRENCHMOS (TM) FET | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:110 V,闸/源击穿电压:+/- 20 V,漏极连续电流:16 A,电阻汲极/源极 RDS... | ||||||
PHX27NQ11T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET TRENCHMOS (TM) FET | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:110 V,闸/源击穿电压:+/- 20 V,漏极连续电流:20.8 A,电阻汲极/源极 R... | ||||||
PHX34NQ11T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET TRENCHMOS (TM) FET | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:110 V,闸/源击穿电压:+/- 20 V,漏极连续电流:24.8 A,电阻汲极/源极 R... | ||||||
PHX45NQ11T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET TRENCHMOS (TM) FET | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:110 V,闸/源击穿电压:+/- 20 V,漏极连续电流:30.4 A,电阻汲极/源极 R... | ||||||
PHX8NQ11T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET TRENCHMOS (TM) FET | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/源击穿电压:+/- 20 V,漏极连续电流:7.5 A,电阻汲极/源极 RDS... | ||||||
PHX9NQ20T | NXP Semiconductors | TO-220F | MOSFET RAIL PWR-MOS | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续... | ||||||
PHX9NQ20T,127 | NXP Semiconductors | TO-220-3 全封装,隔离接片 | MOSFET RAIL PWR-MOS | |||
参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:5.2 A,电阻汲极/源极 RD... | ||||||
PHT11N06LT /T3 | NXP Semiconductors | SOT-223 | MOSFET TAPE13 PWRMOS | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 13 V,漏极连续电... | ||||||
PHT11N06LT,135 | NXP Semiconductors | TO-261-4,TO-261AA | MOSFET TAPE13 PWRMOS | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 13 V,漏极连续电... | ||||||
PBSM5240PF,115 | NXP Semiconductors | 6-HUSON(2x2) | MOSFET BISS | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:8 V,漏极连续电流:0.66 A,电阻汲极/源极 ... | ||||||
PBSS3515E,135 | NXP Semiconductors | SC-75 | MOSFET 15 V, 0.5 A PNP LOW VCESAT TRANSISTOR | |||
参数:NXP USA Inc.|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|停产|PNP|500 mA|15 V|250mV @ 50mA,5... | ||||||
PD55025TR-E | STMicroelectronics | PowerSO-10RF(成形引线) | MOSFET RF Power Trans N-Channel | |||
参数:STMicroelectronics|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|LDMOS|-|500MHz|14.5dB|12... | ||||||
PD57018S-E | STMicroelectronics | PowerSO-10RF(直引线) | 400 | MOSFET 8 BITS MICROCONTR | ||
参数:STMicroelectronics|管件|-|在售|LDMOS|-|945MHz|16.5dB|28 V|2.5A|-|100 mA|18W|65 V|-|P... |
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