| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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RGTH40TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 40A TO247N | ||
| 参数：Rohm Semiconductor|管件|-|不适用于新设计|沟槽型场截止|650 V|40 A|80 A|2.1V @ 15V，20A|144 W|-|标准... | ||||||
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STGH30H65DFB-2AG | STMicroelectronics | H2Pak-2 | AUTOMOTIVE-GRADE TRENCH GATE FIE | ||
| 参数：STMicroelectronics|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|Automotive, AEC-Q101|在售|沟槽型场... | ||||||
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STGP20H60DF | STMicroelectronics | TO-220 | IGBT 600V 40A 167W TO220 | ||
| 参数：STMicroelectronics|管件|-|在售|沟槽型场截止|600 V|40 A|80 A|2V @ 15V，20A|167 W|209μJ（开），26... | ||||||
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IGB30N60TATMA1 | Infineon Technologies | PG-TO263-3-2 | IGBT 600V 60A 187W TO263-3-2 | ||
| 参数：Infineon Technologies|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|TrenchStop?|在售|沟道|600 V|6... | ||||||
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STGP15M65DF2 | STMicroelectronics | TO-220 | TRENCH GATE FIELD-STOP IGBT M SE | ||
| 参数：STMicroelectronics|管件|-|在售|沟槽型场截止|650 V|30 A|60 A|2V @ 15V，15A|136 W|90μJ（开），450... | ||||||
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RGTH60TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 58A TO247N | ||
| 参数：Rohm Semiconductor|管件|-|不适用于新设计|沟槽型场截止|650 V|58 A|120 A|2.1V @ 15V，30A|194 W|-|标... | ||||||
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RGT60TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 55A TO247N | ||
| 参数：Rohm Semiconductor|管件,管件|-|不适用于新设计|沟槽型场截止|650 V|55 A|90 A|2.1V @ 15V，30A|194 W|-... | ||||||
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RGT50TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 48A TO247N | ||
| 参数：Rohm Semiconductor|管件,管件|-|不适用于新设计|沟槽型场截止|650 V|48 A|75 A|2.1V @ 15V，25A|174 W|-... | ||||||
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GT30J65MRB,S1E | Toshiba Semiconductor and Storage | TO-3P（N） | 190 | 650V SILICON N-CHANNEL IGBT, TO- | |
| 参数：Toshiba Semiconductor and Storage|管件|-|在售|-|650 V|60 A|-|1.8V @ 15V，30A|200 W|1.... | ||||||
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IKB30N65ES5ATMA1 | Infineon Technologies | PG-TO263-3 | IGBT TRENCH/FS 650V 62A D2PAK | ||
| 参数：Infineon Technologies|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|TrenchStop? 5|在售|沟槽型场截止|6... | ||||||
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RGTH80TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 70A TO247N | ||
| 参数：Rohm Semiconductor|管件|-|不适用于新设计|沟槽型场截止|650 V|70 A|160 A|2.1V @ 15V，40A|234 W|-|标... | ||||||
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IGP30N65F5XKSA1 | Infineon Technologies | PG-TO220-3 | IGBT TRENCH 650V 55A TO220-3 | ||
| 参数：Infineon Technologies|管件|TrenchStop?|在售|沟道|650 V|55 A|90 A|2.1V @ 15V，30A|188 W|... | ||||||
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GT20N135SRA,S1E | Toshiba Semiconductor and Storage | TO-247 | 6 | D-IGBT TO-247 VCES=1350V IC=40A | |
| 参数：Toshiba Semiconductor and Storage|管件|-|在售|-|1350 V|40 A|80 A|2.4V @ 15V，40A|312 ... | ||||||
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STGFW40V60DF | STMicroelectronics | TO-3PF-3 | IGBT 600V 80A 62.5W TO-3PF | ||
| 参数：STMicroelectronics|管件|-|在售|沟槽型场截止|600 V|80 A|160 A|2.3V @ 15V，40A|62.5 W|456μJ（开... | ||||||
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BIDW20N60T | Bourns Inc. | TO-247 | IGBT 600V 20A TRENCH TO-247N | ||
| 参数：Bourns Inc.|管件|-|在售|沟槽型场截止|600 V|40 A|60 A|2.4V @ 15V，20A|192 W|1mJ（开）， 300μJ（关）... | ||||||
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WG50N65DHWQ | WeEn Semiconductors | TO-247-3 | IGBT TRENCH FD ST 650V 91A TO247 | ||
| 参数：WeEn Semiconductors|管件|-|在售|沟槽型场截止|650 V|91 A|200 A|2V @ 15V，50A|278 W|1.7mJ（开），... | ||||||
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RGTH60TS65GC11 | Rohm Semiconductor | TO-247N | 22 | IGBT TRNCH FIELD 650V 58A TO247N | |
| 参数：Rohm Semiconductor|管件|-|不适用于新设计|沟槽型场截止|650 V|58 A|120 A|2.1V @ 15V，30A|197 W|-|标... | ||||||
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GT40QR21(STA1,E,D | Toshiba Semiconductor and Storage | TO-3P（N） | 25 | DISCRETE IGBT TRANSISTOR TO-3PN( | |
| 参数：Toshiba Semiconductor and Storage|管件|-|在售|-|1200 V|40 A|80 A|2.7V @ 15V，40A|230 ... | ||||||
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IGP40N65H5XKSA1 | Infineon Technologies | PG-TO220-3-1 | IGBT 650V 74A TO220-3 | ||
| 参数：Infineon Technologies|管件|TrenchStop?|在售|-|650 V|74 A|120 A|2.1V @ 15V，40A|255 W|... | ||||||
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FGA40T65SHD | onsemi | TO-3PN | IGBT TRENCH/FS 650V 80A TO3PN | ||
| 参数：onsemi|管件|-|在售|沟槽型场截止|650 V|80 A|120 A|2.1V @ 15V，40A|268 W|1.01mJ（开），297μJ（关）|标... | ||||||
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