STMicroelectronics
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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STFV4N150 | STMicroelectronics | TO-220 | MOSFET IGBT | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1500 V，闸/源击穿... | ||||||
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STFW3N150 | STMicroelectronics | TO-3P-3 整包 | MOSFET N-channel 1500 V 2.5 A PowerMESH | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1500 V，漏极连续电... | ||||||
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STFW4N150 | STMicroelectronics | TO-3P-3 整包 | 34 | MOSFET N-channel 1500 V 4 A PowerMESH | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1500 V，漏极连续电... | ||||||
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STFW60N65M5 | STMicroelectronics | TO-3P-3 整包 | 282 | MOSFET N-ch 650 V 0.049 Ohm 46 A MDmesh | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，闸/源击穿电... | ||||||
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STFW69N65M5 | STMicroelectronics | TO-3P-3 整包 | 252 | MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh V MOS | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，漏极连续电流：58 A，电... | ||||||
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STFW6N120K3 | STMicroelectronics | TO-3PF | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1.2 KV，闸/源击穿... | ||||||
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STH110N10F7-2 | STMicroelectronics | H2Pak-2 | 110 | MOSFET N-Ch 100V 6mOhm 110A STripFET VII | |
| 参数：制造商：STMicroelectronics，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：20 V，漏极连续电... | ||||||
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STH130N10F3-2 | STMicroelectronics | H2Pak-2 | MOSFET N-Ch 100V 7.8 mOhm 120 A STripFET | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，漏极连续电流... | ||||||
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STH180N10F3-2 | STMicroelectronics | H2Pak-2 | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电... | ||||||
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STH180N10F3-6 | STMicroelectronics | TO-263-7，D2Pak（6 引线 + 接片） | MOSFET N-ch 100V 3.9 Ohm 180A STripFET III | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电... | ||||||
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STH210N75F6-2 | STMicroelectronics | H2Pak-2 | MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：75 V，闸/源击穿电压... | ||||||
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STH240N75F3-2 | STMicroelectronics | TO-263-3，D2Pak（2 引线 + 接片），TO-263AB | 93 | MOSFET N-Ch 75V 2.6mOhm 180A STripFET III | |
| 参数：制造商：STMicroelectronics，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：75 V，闸/源击穿电压：20 V，漏极连续电流... | ||||||
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STH240N75F3-6 | STMicroelectronics | H2PAK-6 | MOSFET N-channel 75V 210A STripFET III | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：75 V，闸/源击穿电压... | ||||||
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STGIPS35K60L1 | STMicroelectronics | 22-PowerDIP 模块（0.993"，25.23mm） | 121 | MOSFET SLLIMM IPM 35A 600V Rugged IGBT 4.7kOhm | |
| 参数：制造商：STMicroelectronics，RoHS：是，包装形式：Tube，... | ||||||
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STGIPS40W60L1 | STMicroelectronics | 22-PowerDIP 模块（0.993"，25.23mm） | MOSFET SLLIMM IPM 40A 600V Ultra Fast 4.7kOhm | ||
| 参数：制造商：STMicroelectronics，RoHS：是，包装形式：Tube，... | ||||||
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STB57N65M5 | STMicroelectronics | TO-263-3，D2Pak（2 引线 + 接片），TO-263AB | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，漏极连续电流... | ||||||
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STB5N52K3 | STMicroelectronics | TO-263-3，D2Pak（2 引线 + 接片），TO-263AB | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH3 | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：525 V，漏极连续电流... | ||||||
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STB5N62K3 | STMicroelectronics | D2PAK（TO-263） | MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH3 | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：620 V，闸/源击穿电... | ||||||
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STB5NB60T4 | STMicroelectronics | D2PAK | MOSFET N-Ch 600 Volt 5 Amp | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电... | ||||||
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STB5NB80T4 | STMicroelectronics | D2PAK | MOSFET N-CH 800V 5A | ||
| 参数：制造商：STMicroelectronics，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：800 V，闸/源击穿电压：+/- 30 V，漏... | ||||||
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