Infineon Technologies
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IMZA65R030M1HXKSA1 | Infineon Technologies | TO-247-4 | 175 | SILICON CARBIDE MOSFET, PG-TO247 | |
| 参数：Infineon Technologies|管件|CoolSiC?|在售|N 通道|SiCFET（碳化硅）|650 V|53A（Tc）|18V|42 毫欧 @ ... | ||||||
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IMW120R045M1XKSA1 | Infineon Technologies | PG-TO247-3-41 | SICFET N-CH 1.2KV 52A TO247-3 | ||
| 参数：Infineon Technologies|管件|CoolSiC?|不适用于新设计|N 通道|SiCFET（碳化硅）|1200 V|52A（Tc）|15V|59... | ||||||
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IMW120R040M1HXKSA1 | Infineon Technologies | PG-TO247-3 | SIC DISCRETE | ||
| 参数：Infineon Technologies|管件|CoolSiC?|在售|N 通道|SiCFET（碳化硅）|1200 V|55A（Tc）|15V，18V|54.... | ||||||
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IMW65R030M1HXKSA1 | Infineon Technologies | TO-247-3 | 96 | SILICON CARBIDE MOSFET, PG-TO247 | |
| 参数：Infineon Technologies|管件|CoolSiC?|在售|N 通道|SiCFET（碳化硅）|650 V|58A（Tc）|18V|42 毫欧 @ ... | ||||||
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IPW60R045CPFKSA1 | Infineon Technologies | TO-247-3 | 3,058 | MOSFET N-CH 650V 60A TO247-3 | |
| 参数：Infineon Technologies|管件|CoolMOS?|不适用于新设计|N 通道|MOSFET（金属氧化物）|650 V|60A（Tc）|10V|4... | ||||||
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IPZA65R018CFD7XKSA1 | Infineon Technologies | PG-TO247-4-3 | HIGH POWER_NEW | ||
| 参数：Infineon Technologies|管件|CoolMOS? CFD7|在售|N 通道|MOSFET（金属氧化物）|650 V|106A（Tc）|10V|... | ||||||
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IGLD60R070D1AUMA3 | Infineon Technologies | PG-LSON-8-1 | GANFET N-CH | ||
| 参数：Infineon Technologies|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|CoolGaN?|在售|N 通道|GaNFET（氮... | ||||||
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IGT60R070D1ATMA4 | Infineon Technologies | PG-HSOF-8-3 | GANFET N-CH | ||
| 参数：Infineon Technologies|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|CoolGaN?|在售|N 通道|GaNFET（氮... | ||||||
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IPW60R045CPAFKSA1 | Infineon Technologies | TO-247-3 | 605 | MOSFET N-CH 600V 60A TO247-3 | |
| 参数：Infineon Technologies|管件|Automotive, AEC-Q101, CoolMOS?|在售|N 通道|MOSFET（金属氧化物）|60... | ||||||
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AIMW120R035M1HXKSA1 | Infineon Technologies | TO-247-3 | 10 | 1200V COOLSIC MOSFET PG-TO247-3 | |
| 参数：Infineon Technologies|管件|Automotive, AEC-Q101, CoolSiC?|在售|N 通道|SiCFET（碳化硅）|1200... | ||||||
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IMYH200R100M1HXKSA1 | Infineon Technologies | - | SIC DISCRETE | ||
| 参数：Infineon Technologies|管件|-|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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IMBG65R022M1HXTMA1 | Infineon Technologies | PG-TO263-7-12 | SILICON CARBIDE MOSFET PG-TO263- | ||
| 参数：Infineon Technologies|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|CoolSiC?|在售|N 通道|SiCFET（碳... | ||||||
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IPW60R018CFD7XKSA1 | Infineon Technologies | TO-247-3 | 469 | MOSFET N CH | |
| 参数：Infineon Technologies|管件|CoolMOS? CFD7|在售|N 通道|MOSFET（金属氧化物）|600 V|101A（Tc）|10V|... | ||||||
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IMW65R027M1HXKSA1 | Infineon Technologies | TO-247-3 | 262 | MOSFET 650V NCH SIC TRENCH | |
| 参数：Infineon Technologies|管件|CoolSIC? M1|在售|N 通道|SiCFET（碳化硅）|650 V|47A（Tc）|18V|34 毫欧... | ||||||
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IPW65R018CFD7XKSA1 | Infineon Technologies | PG-TO247-3 | 650 V COOLMOS CFD7 SUPERJUNCTION | ||
| 参数：Infineon Technologies|管件|CoolMOS? CFD7|在售|N 通道|MOSFET（金属氧化物）|650 V|106A（Tc）|10V|... | ||||||
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IMZA65R027M1HXKSA1 | Infineon Technologies | TO-247-4 | 1 | MOSFET 650V NCH SIC TRENCH | |
| 参数：Infineon Technologies|管件|CoolSiC?|在售|N 通道|SiCFET（碳化硅）|650 V|59A（Tc）|18V|34 毫欧 @ ... | ||||||
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IMW120R030M1HXKSA1 | Infineon Technologies | TO-247-3 | SICFET N-CH 1.2KV 56A TO247-3 | ||
| 参数：Infineon Technologies|管件|CoolSiC?|在售|N 通道|SiCFET（碳化硅）|1200 V|56A（Tc）|15V，18V|40 ... | ||||||
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IPZ65R019C7XKSA1 | Infineon Technologies | PG-TO247-4 | MOSFET N-CH 650V 75A TO247-4 | ||
| 参数：Infineon Technologies|管件|CoolMOS? C7|在售|N 通道|MOSFET（金属氧化物）|650 V|75A（Tc）|10V|19 ... | ||||||
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IPZ60R017C7XKSA1 | Infineon Technologies | TO-247-4 | 793 | MOSFET N-CH 600V 109A TO247-4 | |
| 参数：Infineon Technologies|管件|CoolMOS? C7|在售|N 通道|MOSFET（金属氧化物）|600 V|109A（Tc）|10V|17... | ||||||
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IPW60R017C7XKSA1 | Infineon Technologies | TO-247-3 | 35 | HIGH POWER_NEW | |
| 参数：Infineon Technologies|管件|CoolMOS?|在售|N 通道|MOSFET（金属氧化物）|600 V|109A（Tc）|10V|17 毫欧... | ||||||
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