| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
DMS3014SFG-7 |
Diodes Inc. |
8-PowerVDFN |
11,885 |
MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K |
|
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... |
|
DMS3014SSS-13 |
Diodes Inc. |
8-SO |
|
MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIODE |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:10.4 A,电阻汲极/源极 RDS(... |
|
DMS3015SSS-13 |
Diodes Inc. |
8-SOIC(0.154",3.90mm 宽) |
28,057 |
MOSFET MOSFET N-CHAN |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:11 A,电阻汲极/源极 RDS(导通... |
|
DMS3016SSS-13 |
Diodes Inc. |
8-SOIC(0.154",3.90mm 宽) |
|
MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIODE |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:9.8 A,电阻汲极/源极 RDS(导... |
|
DMS3016SSSA-13 |
Diodes Inc. |
8-SOIC(0.154",3.90mm 宽) |
|
MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 12... |
|
DMS3017SSD-13 |
Diodes Inc. |
8-SO |
|
MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 20V |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流:8 A,电阻... |
|
DMS3019SSD-13 |
Diodes Inc. |
8-SO |
|
MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 12V |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流:7 A,电阻... |
|
DMN62D1SFB-7B |
Diodes Inc. |
3-UFDFN |
142,438 |
MOSFET MOSFET BVDSS |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... |
|
DMN63D0LT-7 |
Diodes Inc. |
- |
3,000 |
MOSFET MOSFET BVDSS: 61V-10 V-100V SOT523 T&R 3K |
|
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... |
|
DMN63D8LV-7 |
Diodes Inc. |
SOT-563 |
140,925 |
MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:260 mA,电阻汲极/源极 RDS(... |
|
DMN65D8L-7 |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
428,176 |
MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,漏极连续电流:310 mA,电阻汲极/源极 RDS(... |
|
DMN65D8LFB-7B |
Diodes Inc. |
3-UFDFN |
385,497 |
MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K |
|
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... |
|
DMN65D8LW-7 |
Diodes Inc. |
SC-70,SOT-323 |
|
MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K |
|
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... |
|
DMN66D0LDW-7 |
Diodes Inc. |
SOT-363 |
|
MOSFET 250mW 60Vdss |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
DMN66D0LT-7 |
Diodes Inc. |
SOT-523 |
|
MOSFET NMOS-Single |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
DMN66D0LW-7 |
Diodes Inc. |
SC-70,SOT-323 |
|
MOSFET NMOS-SINGLE |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
DMB53D0UDW-7 |
Diodes Inc. |
SOT-363 |
|
MOSFET N-CHANNEL NPN ENHANCEMENT MODE |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 12... |
|
DMB53D0UV-7 |
Diodes Inc. |
SOT-563 |
|
MOSFET N-CHANNEL NPN ENHANCEMENT MODE |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:3000,... |
|
DMB54D0UDW-7 |
Diodes Inc. |
SOT-363 |
|
MOSFET PNP/NMOS |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:3000,... |
|
DMB54D0UV-7 |
Diodes Inc. |
SOT-563 |
|
MOSFET PNP/NMOS |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:3000,... |