| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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DMN2040LTS-13 | Diodes Inc. | 8-TSSOP | MOSFET ENHANCE MODE MOSFET DUAL N-CHAN | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,漏极连续电流:6.7 A,电... | ||||||
|
DMN2041L-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | 235,472 | MOSFET MOSFET,N-CHANNEL | |
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏极连续电流:6.4 A,... | ||||||
|
DMN2050L-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | MOSFET 1.4W 20V | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12... | ||||||
|
DMN2065UW-7 | Diodes Inc. | SOT-323 | 3 | MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K | |
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... | ||||||
|
DMN2075U-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | 106,553 | MOSFET P-Ch -20V VDSS Enchanced Mosfet | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 ... | ||||||
|
DMN2075UDW-7 | Diodes Inc. | 6-TSSOP,SC-88,SOT-363 | MOSFET MOSFET BVDSS: 8V-24V SOT363,3K | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 ... | ||||||
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DMN2100UDM-7 | Diodes Inc. | SOT-23-6 | 1,890 | MOSFET 900mW 20Vdss | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 ... | ||||||
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DMN2104L-7 | Diodes Inc. | SOT-23-3 | MOSFET SINGLE N-CHANNEL | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12... | ||||||
|
DMN2112SN-7 | Diodes Inc. | SC-59-3 | 4 | MOSFET 20V 1.2A | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 ... | ||||||
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DMN2114SN-7 | Diodes Inc. | SC-59-3 | MOSFET 20V 1.2A | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12... | ||||||
|
DMN2170U-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | MOSFET 600mW 20Vdss | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12... | ||||||
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DMN21D2UFB-7B | Diodes Inc. | 3-UFDFN | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K | ||
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... | ||||||
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DMN2215UDM-7 | Diodes Inc. | SOT-26 | 11,689 | MOSFET 650mW 20V | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12... | ||||||
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DMN2230U-7 | Diodes Inc. | SOT-23-3 | MOSFET 600mW 20Vdss | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12... | ||||||
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DMN2300U-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | MOSFET MOSFET BVDSS: 8V-24V SOT23,3K | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 ... | ||||||
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DMN2300UFB4-7B | Diodes Inc. / Zetex | 3-XFDFN | 564,406 | MOSFET 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A | |
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... | ||||||
|
DMN2300UFB-7B | Diodes Inc. | 3-UFDFN | MOSFET MOSFET BVDSS | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
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DMN2300UFD-7 | Diodes Inc. | X1-DFN1212-3 | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3,3K | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 ... | ||||||
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DMN2300UFL4-7 | Diodes Inc. / Zetex | X2-DFN1310-6(B 类) | MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS | ||
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,漏极连续电流:2.11 A,电阻汲极/源极 RDS(... | ||||||
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DMN2400UFB4-7 | Diodes Inc. | 3-XFDFN | 138,264 | MOSFET MOSFET N-CHANNEL DFN DFN1006-H43 GREEN 3K | |
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... | ||||||
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