图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
FGH60N60SFDTU | Fairchild Semiconductor | TO-247-3 | 440 | IGBT 晶体管 N-Ch/ 60A 600V FS | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGH60N60SFTU | Fairchild Semiconductor | TO-247-3 | 52 | IGBT 晶体管 N-CH / 600V 60A/ FS | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGH60N60SMD | Fairchild Semiconductor | TO-247-3 | IGBT 晶体管 600V/60A Field Stop IGBT ver. 2 | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和... | ||||||
FGH60N60UFDTU | Fairchild Semiconductor | TO-247-3 | 233 | IGBT 晶体管 N-Ch/ 60A 600V FS | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGH60N6S2 | Fairchild Semiconductor | TO-247-3 | IGBT 晶体管 Sgl 600V N-Ch | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGH75N60SFTU | Fairchild Semiconductor | TO-247AB-3 | IGBT 晶体管 N-CH/75A 600V FS Planar | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGH75N60UFTU | Fairchild Semiconductor | TO-247-3 | IGBT 晶体管 N-CH / 600V 75A FS Planar | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGH75T65UPD | Fairchild Semiconductor | TO-247 | 361 | IGBT 晶体管 650V 150A 187W | ||
参数:制造商:Fairchild Semiconductor,RoHS:是,集电极—发射极最大电压 VCEO:650 V,集电极—射极饱和电压:2.3 V,栅极/发射... | ||||||
FGH80N60FD2TU | Fairchild Semiconductor | TO-247-3 | IGBT 晶体管 600V 80A Field Stop | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGH80N60FDTU | Fairchild Semiconductor | TO-247-3 | IGBT 晶体管 600V Field Stop | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGI40N60SFTU | Fairchild Semiconductor | I2PAK(TO-262) | IGBT 晶体管 600V 40A Field Stop | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGK60N6S2D | Fairchild Semiconductor | TO-247-3 | IGBT 晶体管 Dl 600V N-Ch | |||
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
FGL35N120FTDTU | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 1200V 35A Trench IGBT | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,包装形式:Tube,工厂包装数量:25,... | ||||||
FGL40N120ANDTU | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 1200V NPT IGBT | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
FGL40N120ANTU | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 1200V NPT IGBT | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
FGL40N150DTU | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 1500V/40A/FRD | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1500... | ||||||
FGL60N100BNTD | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 HIGH_POWER | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1000... | ||||||
FGL60N100BNTDTU | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 HIGH_POWER | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1000... | ||||||
FGL60N100DTU | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 60A 1000V | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1000... | ||||||
FGL60N170DTU | Fairchild Semiconductor | TO-264-3 | IGBT 晶体管 Copak Discrete IGBT | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1700... |
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