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CEL

CEL

California Eastern Laboratories (CEL) is the exclusive sales and marketing partner in North America and Latin America for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly NEC Electronics Corporation. These products include RF components and RFICs, optocouplers, solid state relays, and lasers and detectors for fiber optics. CEL maintains extensive inventories, sets pricing, and provides engineering and applications support at its design center in Santa Clara, CA. CEL also develops its MeshConnect™ line of IEEE 802.15.4/ZigBee radio modules and transceiver ICs and is a member of the ZigBee Alliance (www.zigbee.org)
图片 型号 品牌 封装 数量 描述 PDF资料
NESG3032M14-T3-A CEL 射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr
参数:制造商:CEL,产品种类:射频硅锗晶体管,RoHS:是,包装形式:Tape,...
点击查看NESG3033M14-A参考图片 NESG3033M14-A CEL 147 射频硅锗晶体管 NPN Germanium Amp
参数:制造商:CEL,产品种类:射频硅锗晶体管,RoHS:是,集电极连续电流:35 mA,功率耗散:150 mW,安装风格:SMD/SMT,...
NESG3033M14-T3-A CEL LeadLess Mini-Mold 射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr
参数:制造商:CEL,产品种类:射频硅锗晶体管,RoHS:是,封装形式:LeadLess Mini-Mold,包装形式:Tape,最大工作温度:+ 150 C,最小工...
NESG4030M14-A CEL LeadLess Mini-Mold 29 射频硅锗晶体管 Low Noise, SiGe: C HBT 2V,6mA@5.8GHz
参数:制造商:CEL,产品种类:射频硅锗晶体管,RoHS:是,集电极连续电流:35 mA,功率耗散:105 mW,安装风格:SMD/SMT,封装形式:LeadLess...
NESG4030M14-T3-A CEL 射频硅锗晶体管 NPN SiGe:C Amp & Osc with ESD protection. ROHS compliant
参数:制造商:CEL,包装形式:Tape,...
点击查看NESG7030M04-A参考图片 NESG7030M04-A CEL M04 射频硅锗晶体管 NF .75dB Gain 14dB
参数:制造商:CEL,RoHS:是,集电极连续电流:30 mA,功率耗散:125 mW,安装风格:SMD/SMT,封装形式:M04,包装形式:Cut Tape,集电极...
点击查看NESG7030M04-T2-A参考图片 NESG7030M04-T2-A CEL M04 射频硅锗晶体管 NF .75dB Gain 14dB
参数:制造商:CEL,RoHS:是,集电极连续电流:30 mA,功率耗散:125 mW,安装风格:SMD/SMT,封装形式:M04,包装形式:Reel,集电极—发射极...

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