CEL
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California Eastern Laboratories (CEL) is the exclusive sales and marketing partner in North America and Latin America for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly NEC Electronics Corporation. These products include RF components and RFICs, optocouplers, solid state relays, and lasers and detectors for fiber optics. CEL maintains extensive inventories, sets pricing, and provides engineering and applications support at its design center in Santa Clara, CA. CEL also develops its MeshConnect™ line of IEEE 802.15.4/ZigBee radio modules and transceiver ICs and is a member of the ZigBee Alliance (www.zigbee.org) |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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NE55410GR-AZ | CEL | 16-HTSSOP | 射频MOSFET电源晶体管 N-Ch Power LDMOS FET | ||
| 参数：CEL|散装|-|停产|LDMOS|-|2.14GHz|13.5dB|28 V|250mA，1A|-|20 mA|35.4dBm|65 V|-|16-DFF，裸... | ||||||
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NE55410GR-T3-AZ | CEL | 16-HTSSOP | 射频MOSFET电源晶体管 Silicon Medium Pwr LDMOSFET | ||
| 参数：CEL|卷带（TR）|-|停产|LDMOS|-|2.14GHz|13.5dB|28 V|250mA，1A|-|20 mA|35.4dBm|65 V|-|16-D... | ||||||
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NE5520279A-A | CEL | 79A | 射频MOSFET电源晶体管 L/S Band Med Power | ||
| 参数：制造商：CEL，产品种类：射频MOSFET电源晶体管，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：15 V，漏极连续电流：0.6 A，闸/... | ||||||
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NE461M02 | CEL | 射频MOSFET电源晶体管 | |||
| 参数：制造商：CEL，RoHS：否，晶体管极性：N-Channel，... | ||||||
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NE461M02-AZ | CEL | SOT-89 | 射频MOSFET电源晶体管 NPN Low Distort Amp | ||
| 参数：制造商：CEL，产品种类：射频MOSFET电源晶体管，RoHS：是，配置：Single Dual Emitter，晶体管极性：N-Channel，最大工作温度：... | ||||||
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NE5511279A-A | CEL | 79A | 12 | 射频MOSFET电源晶体管 UHF Band RF Power | |
| 参数：制造商：CEL，产品种类：射频MOSFET电源晶体管，RoHS：是，配置：Single，晶体管极性：N-Channel，频率：900 MHz，增益：15 dB，... | ||||||
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NE5511279A-T1-A | CEL | 79A | 射频MOSFET电源晶体管 UHF Band RF Power | ||
| 参数：CEL|剪切带（CT）,Digi-Reel 得捷定制卷带|-|停产|LDMOS|-|900MHz|15dB|7.5 V|3A|-|400 mA|40dBm|20... | ||||||
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NE5520279A-T1-A | CEL | 79A | 射频MOSFET电源晶体管 L/S Band Med Power | ||
| 参数：制造商：CEL，产品种类：射频MOSFET电源晶体管，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：15 V，漏极连续电流：0.6 A，闸/... | ||||||
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NE5520379A-A | CEL | 79A | 射频MOSFET电源晶体管 L&S Band LD-MOSFET | ||
| 参数：制造商：CEL，产品种类：射频MOSFET电源晶体管，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：15 V，漏极连续电流：1.5 A，闸/... | ||||||
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NE5531079A-A | CEL | 79A | 射频MOSFET电源晶体管 7.5Volts 460MHz LDMO | ||
| 参数：CEL|散装|-|停产|LDMOS|-|460MHz|-|7.5 V|3A|-|200 mA|40dBm|30 V|-|4-SMD，扁平引线|79A... | ||||||
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NE5531079A-T1-A | CEL | 79A | 射频MOSFET电源晶体管 Silicon Medium Power LDMOSFET RoHS compliant | ||
| 参数：制造商：CEL，配置：Single，晶体管极性：N-Channel，频率：460 MHz，增益：20.5 dB，输出功率：40 dBm，汲极/源极击穿电压：30... | ||||||
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NE5531079A-T1A-A | CEL | 79A | 射频MOSFET电源晶体管 Silicon Medium Power LDMOSFET RoHS compliant | ||
| 参数：CEL|卷带（TR）|-|停产|LDMOS|-|460MHz|-|7.5 V|3A|-|200 mA|40dBm|30 V|-|4-SMD，扁平引线|79A... | ||||||
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NE5520379A-T1A-A | CEL | 79A | 射频MOSFET电源晶体管 L&S Band LD-MOSFET | ||
| 参数：CEL|剪切带（CT）,Digi-Reel 得捷定制卷带|-|停产|LDMOS|-|915MHz|16dB|3.2 V|1.5A|-|-|35.5dBm|15 ... | ||||||
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NE552R479A | CEL | 79A | 射频MOSFET电源晶体管 | ||
| 参数：制造商：CEL，RoHS：否，配置：Single，晶体管极性：N-Channel，频率：2.45 GHz，增益：11 dB，输出功率：26 dBm，汲极/源极击... | ||||||
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NE552R479A-A | CEL | 79A | 19 | 射频MOSFET电源晶体管 L&S Band Med Power | |
| 参数：制造商：CEL，产品种类：射频MOSFET电源晶体管，RoHS：是，配置：Single，晶体管极性：N-Channel，频率：2.45 GHz，增益：11 dB... | ||||||
