Infineon Technologies
|
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
IPP25N06S3-25 | Infineon Technologies | TO-220AB | MOSFET N-CH 55V 25A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
IPP25N06S3L-22 | Infineon Technologies | PG-TO220-3-1 | MOSFET OptiMOS-T2 PWR TRANS 55V 25A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 16 V,... | ||||||
|
IPP260N06N3 G | Infineon Technologies | TO-220-3 | 180 | MOSFET N-KANAL POWER MOS | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:20 V,漏极连续... | ||||||
|
IPP26CN10N G | Infineon Technologies | TO-220 | MOSFET OptiMOS2 PWR TRANS 100V 35A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V... | ||||||
|
IPP26CNE8N G | Infineon Technologies | PG-TO220-3 | MOSFET OptiMOS 2 PWR Transt 85V 35A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:85 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
IPP320N20N3 G | Infineon Technologies | TO-220-3 | 2392 | MOSFET N-channel POWER MOS | |
| 参数:制造商:Infineon,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:20 V,漏极连续电流:34 A,电阻汲... | ||||||
|
IPP35CN10N G | Infineon Technologies | TO-220-3 | MOSFET N-CH 100V 27A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V... | ||||||
|
IPP45N06S3-16 | Infineon Technologies | PG-TO220-3-1 | MOSFET N-CH 55V 45A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
IPP45N06S3L-13 | Infineon Technologies | PG-TO220-3-1 | MOSFET N-CH 55V 45A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 16 V,... | ||||||
|
IPP45N06S4-09 | Infineon Technologies | MOSFET N-Channel 60V MOSFET | |||
| 参数:制造商:Infineon,RoHS:是,包装形式:Tube,零件号别名:IPP45N06S409AKSA1 IPP45N06S409AKSA2 SP000374... | ||||||
|
IPP45N06S4L-08 | Infineon Technologies | MOSFET N-Channel 60V MOSFET | |||
| 参数:制造商:Infineon,RoHS:是,包装形式:Tube,零件号别名:IPP45N06S4L08AKSA1 IPP45N06S4L08AKSA2 SP0003... | ||||||
|
IPP45P03P4L-11 | Infineon Technologies | MOSFET P-Channel -30V MOSFET | |||
| 参数:制造商:Infineon,RoHS:是,包装形式:Tube,零件号别名:IPP45P03P4L11AKSA1 IPP45P03P4L11XK SP0003963... | ||||||
|
IPP47N10S33 | Infineon Technologies | TO-220AB | MOSFET | ||
| 参数:制造商:Infineon,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:47 A,电阻汲极/源... | ||||||
|
IPP47N10S-33 | Infineon Technologies | TO-220AB | MOSFET SIPMOS PWR-TRANS 100V 47A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V... | ||||||
|
IPP47N10SL26 | Infineon Technologies | TO-220AB | MOSFET | ||
| 参数:制造商:Infineon,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:47 A,电阻汲极/源... | ||||||
|
IPP47N10SL-26 | Infineon Technologies | TO-220AB | 1488 | MOSFET SIPMOS PWR-TRANS 100V 47A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V... | ||||||
|
IPP50CN10N G | Infineon Technologies | TO-220 | MOSFET N-CH 100V 20A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V... | ||||||
|
IPP50CN10NGXKSA1 | Infineon Technologies | PG-TO220-3 | MOSFET | ||
| 参数:制造商:Infineon,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:20 V,漏极连续电流:20 A,电阻汲... | ||||||
|
IPP50N10S3L-16 | Infineon Technologies | TO-220 | MOSFET OptiMOS-T PWR TRANS 100V 50A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,漏极连续电流:50 A,电阻汲极... | ||||||
|
IPP50R140CP | Infineon Technologies | TO-220AB | 173 | MOSFET COOL MOS PWR TRANS 550V 0.140 Ohms | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V... | ||||||
81/305 首页 上页 [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] 下页 尾页