Infineon Technologies
|
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
SPP02N80C3 | Infineon Technologies | TO-220AB | 4 | MOSFET COOL MOS N-CH 800V 2A | |
| 参数:制造商:Infineon,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V,漏极连续电流:2 A,... | ||||||
|
SPP03N60C3 | Infineon Technologies | TO-220AB | 340 | MOSFET MOSFET N-Channel | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP03N60S5 | Infineon Technologies | TO-220AB | 378 | MOSFET COOL MOS N-CH 600V 3.2A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP04N50C3 | Infineon Technologies | TO-220AB | 209 | MOSFET COOL MOS N-CH 500V 4.5A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP04N60C3 | Infineon Technologies | TO-220AB | 258 | MOSFET COOL MOS N-CH 650V 4.5A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP04N60S5 | Infineon Technologies | TO-220AB | MOSFET COOL MOS N-CH 600V 4.5A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP04N80C3 | Infineon Technologies | TO-220AB | MOSFET COOL MOS N-CH 800V 4A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP06N60C3 | Infineon Technologies | TO-220AB | 356 | MOSFET COOL MOS N-CH 650V 6.2A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP06N60C3XKSA1 | Infineon Technologies | TO-220-3 | MOSFET | ||
| 参数:制造商:Infineon,RoHS:是,汲极/源极击穿电压:650 V,闸/源击穿电压:20 V,漏极连续电流:6.2 A,电阻汲极/源极 RDS(导通):0.... | ||||||
|
SPP06N80C3 | Infineon Technologies | TO-220AB | 190 | MOSFET COOL MOS N-CH 800V 6A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP07N60C3 | Infineon Technologies | TO-220AB | MOSFET COOL MOS N-CH 650V 7.3A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP07N60CFD | Infineon Technologies | TO-220AB | 32 | MOSFET COOL MOS PWR TRANS 650V 0.7 Ohms | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP07N60CFDXKSA1 | Infineon Technologies | TO-220-3 | MOSFET | ||
| 参数:制造商:Infineon,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:20 V,漏极连续电流:6.6 A,电阻... | ||||||
|
SPP07N60S5 | Infineon Technologies | TO-220-3 | MOSFET COOL MOS N-CH 600V 7.3A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP07N60S5XKSA1 | Infineon Technologies | TO-220-3 | MOSFET | ||
| 参数:制造商:Infineon,RoHS:是,汲极/源极击穿电压:600 V,闸/源击穿电压:20 V,漏极连续电流:7.3 A,电阻汲极/源极 RDS(导通):0.... | ||||||
|
SPP07N65C3 | Infineon Technologies | TO-220AB | 486 | MOSFET COOL MOS N-CH 730V 7.3A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP08N50C3 | Infineon Technologies | TO-220AB | MOSFET COOL MOS PWR TRANS 560V 7.6A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:560 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP08N80C3 | Infineon Technologies | TO-220AB | 524 | MOSFET COOL MOS N-CH 800V 8A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V... | ||||||
|
SPP08P06P | Infineon Technologies | TO-220AB | MOSFET P-CH 60V 8.8A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,闸/源击穿电压:+/- 20 ... | ||||||
|
SPP08P06P H | Infineon Technologies | PG-TO-220-3 | 768 | MOSFET SIPMOS Power Transistor | |
| 参数:制造商:Infineon,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,闸/源击穿电压:- 3 V,漏极连续电流:- 8.8 ... | ||||||
11/305 首页 上页 [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] 下页 尾页