Infineon Technologies
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IPI100N04S4-H2 | Infineon Technologies | MOSFET N-Channel 40V MOSFET | |||
| 参数：制造商：Infineon，RoHS：是，包装形式：Tube，零件号别名：IPI100N04S4H2AKSA1 IPI100N04S4H2XK SP0007112... | ||||||
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IPI100N06S3-03 | Infineon Technologies | PG-TO262-3 | MOSFET OptiMOS-T2 PWR TRANS 55V 100A | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：55 V，闸/源击穿电压：+/- 20 V，... | ||||||
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IPI100N06S3-04 | Infineon Technologies | PG-TO262-3 | MOSFET OptiMOS-T2 PWR TRANS 55V 100A | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：55 V，闸/源击穿电压：+/- 20 V，... | ||||||
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IPI100N06S3L-03 | Infineon Technologies | PG-TO262-3 | MOSFET N-CH 55V100A 2.7mOhm | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：55 V，闸/源击穿电压：+/- 16 V，... | ||||||
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IPI100N06S3L-04 | Infineon Technologies | TO-262 | MOSFET OptiMOS-T PWR TRANS 55V 100A | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：55 V，闸/源击穿电压：+/- 16 V，... | ||||||
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IPI100N08N3 G | Infineon Technologies | TO-262 | MOSFET N-KANAL POWER MOS | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/源击穿电压：+/- 20 V，... | ||||||
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IPI100N08S207 | Infineon Technologies | TO-262 | MOSFET MOSFET | ||
| 参数：制造商：Infineon，晶体管极性：N-Channel，汲极/源极击穿电压：75 V，闸/源击穿电压：+/- 20 V，漏极连续电流：100 A，电阻汲极/源... | ||||||
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IPI100N08S2-07 | Infineon Technologies | TO-262 | MOSFET OptiMOS PWR TRANST 75V 100A | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：75 V，闸/源击穿电压：+/- 20 V，... | ||||||
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IPI100N10S3-05 | Infineon Technologies | TO-262 | MOSFET OptiMOS -T PWR TRANS 100V 100A | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 20 V... | ||||||
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IPI100P03P3L-04 | Infineon Technologies | PG-TO262-3 | MOSFET OPTIMOS-P TRNCH P-CH -30V -100A 4mOhms | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：- 16 V,... | ||||||
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IPI110N20N3 G | Infineon Technologies | TO-262-3 | 499 | MOSFET N-Channel 200V MOSFET | |
| 参数：制造商：Infineon，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：+/- 20 V，漏极连续电流：88 A... | ||||||
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IPI111N15N3 G | Infineon Technologies | MOSFET N-Channel 150V MOSFET | |||
| 参数：制造商：Infineon，RoHS：是，包装形式：Tube，零件号别名：SP000680232，... | ||||||
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IPI11N03LA | Infineon Technologies | PG-TO262-3 | MOSFET N-KANAL POWER MOS | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：25 V，闸/源击穿电压：+/- 20 V，... | ||||||
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IPI11N60C3A | Infineon Technologies | MOSFET MOSFET | |||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，包装形式：Tube，零件号别名：IPI11N60C3AAKSA1 IPI11N60C3AXK S... | ||||||
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IPI120N04S302 | Infineon Technologies | TO-262 | MOSFET | ||
| 参数：制造商：Infineon，晶体管极性：N-Channel，汲极/源极击穿电压：40 V，闸/源击穿电压：+/- 20 V，漏极连续电流：120 A，电阻汲极/源... | ||||||
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IPI120N04S3-02 | Infineon Technologies | TO-262 | MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A 2 mOhm | ||
| 参数：制造商：Infineon，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：40 V，闸/源击穿电压：+/- 20 V，... | ||||||
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IPI120N04S4-01 | Infineon Technologies | MOSFET N-Channel 40V MOSFET | |||
| 参数：制造商：Infineon，RoHS：是，包装形式：Tube，零件号别名：IPI120N04S401AKSA1 IPI120N04S401XK SP0007057... | ||||||
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IPI120N04S4-02 | Infineon Technologies | MOSFET N-Channel 40V MOSFET | |||
| 参数：制造商：Infineon，RoHS：是，包装形式：Tube，零件号别名：IPI120N04S402AKSA1 IPI120N04S402XK SP0007647... | ||||||
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IPI120N06S4-02 | Infineon Technologies | MOSFET N-Channel 60V MOSFET | |||
| 参数：制造商：Infineon，RoHS：是，包装形式：Tube，零件号别名：IPI120N06S402AKSA1 IPI120N06S402AKSA2 SP0004... | ||||||
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IPI120N06S4-03 | Infineon Technologies | MOSFET N-Channel 60V MOSFET | |||
| 参数：制造商：Infineon，RoHS：是，包装形式：Tube，零件号别名：IPI120N06S403AKSA1 IPI120N06S403AKSA2 SP0003... | ||||||
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