Fairchild Semiconductor
|
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
HUF76013D3ST | Fairchild Semiconductor | TO-252-3，DPak（2 引线 + 接片），SC-63 | MOSFET 20a 20V N-Ch Logic Level 0.022Ohm | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
HUF76013P3 | Fairchild Semiconductor | TO-220AB | MOSFET 20a 20V N-Ch Logic Level 0.022Ohm | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
HUF76105DK8T | Fairchild Semiconductor | SOP-8 | MOSFET USE 512-FDS6930A Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76105SK8T | Fairchild Semiconductor | SOP-8 | MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
HUF76107D3 | Fairchild Semiconductor | TO-251 | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
HUF76107D3S | Fairchild Semiconductor | TO-252AA | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76107D3ST | Fairchild Semiconductor | TO-252AA | MOSFET USE 512-FDD6630A Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
HUF76107P3 | Fairchild Semiconductor | TO-220AB | MOSFET 20a 30V 0.052 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76107P3_R4782 | Fairchild Semiconductor | TO-220AB | MOSFET USE 512-FDP6030BL Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
|
HUF76113DK8 | Fairchild Semiconductor | SOP-8 | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76113DK8T | Fairchild Semiconductor | SOP-8 | MOSFET USE 512-FDS6912A Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76113SK8 | Fairchild Semiconductor | SOP-8 | MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76113SK8T | Fairchild Semiconductor | SOP-8 | MOSFET USE 512-FDS6612A Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76113T3ST | Fairchild Semiconductor | SOT-223-4 | MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
HUF76121D3 | Fairchild Semiconductor | TO-251 | MOSFET 20a 30V N-Ch Logic Level 0.023Ohm | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76121D3S | Fairchild Semiconductor | TO-252AA | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76121D3ST | Fairchild Semiconductor | TO-252AA | MOSFET USE 512-FDD6612A Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
HUF76121P3 | Fairchild Semiconductor | TO-220AB | MOSFET 47a 30V N-Ch MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
HUF76121S3S | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
HUF76121S3ST | Fairchild Semiconductor | TO-263AB | MOSFET USE 512-FDB6030BL | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
134/225 首页 上页 [129] [130] [131] [132] [133] [134] [135] [136] [137] [138] [139] 下页 尾页
