Advanced Linear Devices
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Advanced Linear Devices, Inc., (ALD) develops and manufactures ultra-low-power, precision CMOS analog integrated circuits and related board level products, incorporating the company’s exclusive EPAD® technology. ALD's standard products include a full complement of “best-of-breed” ultra-low-charge-injection low-voltage analog switches, dual-slope A/D converters and digital processors, precision voltage comparators, rail-to-rail CMOS operational amplifiers, and low-drift CMOS timers with high discharge output, as well as an extensive selection of enhancement, depletion, and zero-threshold mode EPAD matched small signal MOSFET arrays. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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ALD114904ASAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual EPAD(R) N-Ch | |||
参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/... | ||||||
ALD114904PAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual EPAD(R) N-Ch | |||
参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/... | ||||||
ALD114904SAL | Advanced Linear Devices | 8-SOIC | 31 | MOSFET Dual EPAD(R) N-Ch | ||
参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/... | ||||||
ALD114913PAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual EPAD(R) N-Ch | |||
参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/... | ||||||
ALD114913SAL | Advanced Linear Devices | 8-SOIC | 245 | MOSFET Dual EPAD(R) N-Ch | ||
参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/... | ||||||
ALD114935PAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual EPAD(R) N-Ch | |||
参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/... | ||||||
ALD114935SAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual EPAD(R) N-Ch | |||
参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10 V,闸/... | ||||||
ALD210800APCL | Advanced Linear Devices | 16-PDIP | 12 | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | ||
参数:制造商:Advanced Linear Devices,RoHS:是,最大工作温度:+ 70 C,安装风格:Through Hole,封装形式:PDIP-16,... | ||||||
ALD210800ASCL | Advanced Linear Devices | 16-SOIC | 37 | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | ||
参数:制造商:Advanced Linear Devices,RoHS:是,最大工作温度:+ 70 C,安装风格:SMD/SMT,封装形式:SOIC-16,包装形式:... | ||||||
ALD210800PCL | Advanced Linear Devices | 16-PDIP | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | |||
参数:制造商:Advanced Linear Devices,RoHS:是,最大工作温度:+ 70 C,安装风格:Through Hole,封装形式:PDIP-16,... | ||||||
ALD210800SCL | Advanced Linear Devices | 16-SOIC | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | |||
参数:制造商:Advanced Linear Devices,RoHS:是,最大工作温度:+ 70 C,安装风格:SMD/SMT,封装形式:SOIC-16,包装形式:... | ||||||
ALD212900APAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | |||
参数:制造商:Advanced Linear Devices,RoHS:是,包装形式:Tube,... | ||||||
ALD212900ASAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | |||
参数:制造商:Advanced Linear Devices,RoHS:是,包装形式:Tube,... | ||||||
ALD212900PAL | Advanced Linear Devices | 8-PDIP | 34 | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | ||
参数:制造商:Advanced Linear Devices,RoHS:是,包装形式:Tube,... | ||||||
ALD212900SAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | |||
参数:制造商:Advanced Linear Devices,RoHS:是,包装形式:Tube,... |
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