| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|---|
|
ALD110914PAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD110914SAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD1109EPAL |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual N-Ch Pair Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD1109ESAL |
Advanced Linear Devices |
SOIC-8 |
|
MOSFET Dual N-Ch Pair Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD1110EPAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual EPAD(R) Prog |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，漏极... |
|
|
ALD1110ESAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual EPAD(R) Prog |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，漏极... |
|
|
ALD1115MAL |
Advanced Linear Devices |
8-MSOP |
|
MOSFET Comp N-Channel & P-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
|
ALD1115PAL |
Advanced Linear Devices |
8-PDIP |
36 |
MOSFET Comp N-Channel & P-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
|
ALD1115SAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Comp N-Channel & P-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
|
ALD1116PA |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual N-Channel Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：12 V，闸/... |
|
|
ALD1116PAL |
Advanced Linear Devices |
8-PDIP |
132 |
MOSFET Dual N-Channel Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：12 V，闸/... |
|
|
ALD1116SA |
Advanced Linear Devices |
SOIC-8 |
|
MOSFET Dual N-Channel Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：13.2 V，... |
|
|
ALD1116SAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual N-Channel Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：12 V，闸/... |
|
ALD1117PA |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual P-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
|
ALD1117PAL |
Advanced Linear Devices |
8-PDIP |
32 |
MOSFET Dual P-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
|
ALD1117SA |
Advanced Linear Devices |
SOIC-8 |
|
MOSFET Dual P-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
|
ALD1117SAL |
Advanced Linear Devices |
8-SOIC |
581 |
MOSFET Dual P-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
ALD111910MAL |
Advanced Linear Devices |
- |
|
MOSFET Dual N-Ch FET EPAD Matched Pair Array |
|
| 参数：制造商：Advanced Linear Devices，RoHS：是，包装形式：Tube，... |
|
|
ALD111910PAL |
Advanced Linear Devices |
- |
|
MOSFET Dual N-Ch FET EPAD Matched Pair Array |
|
| 参数：制造商：Advanced Linear Devices，RoHS：是，包装形式：Tube，... |
|
|
ALD111910SAL |
Advanced Linear Devices |
- |
|
MOSFET Dual N-Ch FET EPAD Matched Pair Array |
|
| 参数：制造商：Advanced Linear Devices，RoHS：是，包装形式：Tube，... |
