Infineon Technologies
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IDC15D120T6MX1SA2 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 25A WAFER | ||
| 参数：Infineon Technologies|散装|-|停产|标准|1200 V|25A|2.05 V @ 25 A|标准恢复 >500ns，> 200mA（Io... | ||||||
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IDC28D120T6MX1SA2 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 50A WAFER | ||
| 参数：Infineon Technologies|散装|-|停产|标准|1200 V|50A|2.05 V @ 50 A|标准恢复 >500ns，> 200mA（Io... | ||||||
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IDC40D120T6MX1SA4 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 75A WAFER | ||
| 参数：Infineon Technologies|散装|-|停产|标准|1200 V|75A|2.05 V @ 75 A|标准恢复 >500ns，> 200mA（Io... | ||||||
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IDC51D120T6MX1SA3 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 100A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|100A|2.05 V @ 100 A|标准恢复 >500ns，> 200mA（... | ||||||
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IDC73D120T6MX1SA2 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 150A WAFER | ||
| 参数：Infineon Technologies|散装|-|Digi-Key 停止提供|标准|1200 V|150A|2.05 V @ 150 A|标准恢复 >500... | ||||||
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SIDC06D120H8X1SA2 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 7.5A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|7.5A|1.97 V @ 7.5 A|标准恢复 >500ns，> 200mA（... | ||||||
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SIDC08D120H8X1SA1 | Infineon Technologies | - | DIODE GEN PURP 1.2KV 150A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|150A|1.41 V @ 45 A|标准恢复 >500ns，> 200mA（I... | ||||||
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SIDC105D120H8X1SA1 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 200A WAFER | ||
| 参数：Infineon Technologies|散装|-|Digi-Key 停止提供|标准|1200 V|200A|1.41 V @ 45 A|标准恢复 >500n... | ||||||
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SIDC10D120H8X1SA2 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 15A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|15A|1.97 V @ 7.5 A|标准恢复 >500ns，> 200mA（I... | ||||||
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SIDC14D120H8X1SA1 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 25A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|25A|1.97 V @ 25 A|标准恢复 >500ns，> 200mA（Io... | ||||||
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SIDC23D120H8X1SA1 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 35A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|35A|1.97 V @ 35 A|标准恢复 >500ns，> 200mA（Io... | ||||||
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SIDC30D120H8X1SA4 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 50A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|50A|1.97 V @ 50 A|标准恢复 >500ns，> 200mA（Io... | ||||||
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SIDC42D120H8X1SA3 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 75A WAFER | ||
| 参数：Infineon Technologies|散装|-|Digi-Key 停止提供|标准|1200 V|75A|1.97 V @ 50 A|标准恢复 >500ns... | ||||||
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SIDC53D120H8X1SA1 | Infineon Technologies | 带箔切割晶片 | DIODE GP 1.2KV 100A WAFER | ||
| 参数：Infineon Technologies|散装|-|Digi-Key 停止提供|标准|1200 V|100A|1.97 V @ 100 A|标准恢复 >500... | ||||||
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SIDC81D120H8X1SA3 | Infineon Technologies | - | DIODE GEN PURP 1.2KV 150A WAFER | ||
| 参数：Infineon Technologies|散装|-|在售|标准|1200 V|150A|2.15 V @ 150 A|标准恢复 >500ns，> 200mA（... | ||||||
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IRD3CH101DB6 | Infineon Technologies | 模具 | DIODE GEN PURP 1.2KV 200A DIE | ||
| 参数：Infineon Technologies|散装|-|停产|标准|1200 V|200A|2.7 V @ 200 A|快速恢复 =< 500ns，> 200mA... | ||||||
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IRD3CH101DD6 | Infineon Technologies | - | DIODE CHIP EMITTER CONTROLLED | ||
| 参数：Infineon Technologies|散装|-|停产|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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IRD3CH101DF6 | Infineon Technologies | - | DIODE CHIP EMITTER CONTROLLED | ||
| 参数：Infineon Technologies|散装|-|停产|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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IRD3CH11DB6 | Infineon Technologies | 模具 | DIODE GEN PURP 1.2KV 25A DIE | ||
| 参数：Infineon Technologies|散装|-|停产|标准|1200 V|25A|2.7 V @ 25 A|快速恢复 =< 500ns，> 200mA（I... | ||||||
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IRD3CH11DD6 | Infineon Technologies | - | DIODE CHIP EMITTER CONTROLLED | ||
| 参数：Infineon Technologies|散装|-|停产|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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