| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
BLF7G27L-135,118 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 POWER LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|-|2.6GHz ~ 2.7GHz|16.5dB|28 V|-|-|1.3 A|25W|-... | ||||||
|
|
BLF7G27L-140,112 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|-|2.5GHz ~ 2.7GHz|16.5dB|28 V|28A|-|1.3 A|30W|65 ... | ||||||
|
|
BLF7G27L-140,118 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|-|2.5GHz ~ 2.7GHz|16.5dB|28 V|28A|-|1.3 A|30W... | ||||||
|
BLF7G27L-150P,112 | NXP Semiconductors | SOT539A | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|管件|-|停产|LDMOS|双，共源|2.5GHz ~ 2.7GHz|16.5dB|28 V|37A|-|1.2 A|30W|... | ||||||
|
|
BLF7G27L-150P,118 | NXP Semiconductors | SOT539A | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|双，共源|2.5GHz ~ 2.7GHz|16.5dB|28 V|37A|-|1.2 A|... | ||||||
|
BLF7G27L-200PB,112 | NXP Semiconductors | SOT1110A | 射频MOSFET电源晶体管 2.65GHz 65V 17.7dB | ||
| 参数：制造商：NXP，RoHS：是，频率：2.6 GHz to 2.7 GHz，增益：17.7 dB，输出功率：200 W，汲极/源极击穿电压：65 V，闸/源击穿电... | ||||||
|
BLF7G27L-200PB,118 | NXP Semiconductors | SOT1110A | 射频MOSFET电源晶体管 2.65GHz 65V 17.7dB | ||
| 参数：制造商：NXP，频率：2.6 GHz to 2.7 GHz，增益：17.7 dB，输出功率：200 W，汲极/源极击穿电压：65 V，闸/源击穿电压：13 V，... | ||||||
|
BLF7G27L-75P,112 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 Single 65V 18A 0.29Ohms | ||
| 参数：Ampleon USA Inc.|管件|-|停产|LDMOS|双，共源|2.3GHz ~ 2.4GHz|17dB|28 V|18A|-|650 mA|12W|6... | ||||||
|
|
BLF7G27L-75P,118 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 Single 65V 18A 0.29Ohms | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|双，共源|2.3GHz ~ 2.4GHz|17dB|28 V|18A|-|650 mA|1... | ||||||
|
|
BLF7G27L-90P,112 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|双，共源|2.5GHz ~ 2.7GHz|18.5dB|28 V|18A|-|720 mA|16W... | ||||||
|
|
BLF7G27L-90P,118 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|双，共源|2.5GHz ~ 2.7GHz|18.5dB|28 V|18A|-|720 mA... | ||||||
|
BLF7G27LS-100,112 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 Single 65V | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|-|2.5GHz ~ 2.7GHz|18dB|28 V|28A|-|900 mA|20W|65 V... | ||||||
|
|
BLF7G27LS-100,118 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 Single 65V | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|-|2.5GHz ~ 2.7GHz|18dB|28 V|28A|-|900 mA|20W|... | ||||||
|
|
BLF7G27LS-140,112 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|-|2.5GHz ~ 2.7GHz|16.5dB|28 V|28A|-|1.3 A|30W|65 ... | ||||||
|
|
BLF7G27LS-140,118 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|-|2.5GHz ~ 2.7GHz|16.5dB|28 V|28A|-|1.3 A|30W... | ||||||
|
BLF7G27LS-150P,112 | NXP Semiconductors | SOT539B | 射频MOSFET电源晶体管 SINGLE 65V 37A 0.86S | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|双，共源|2.5GHz ~ 2.7GHz|16.5dB|28 V|37A|-|1.2 A|30W|... | ||||||
|
|
BLF7G27LS-150P,118 | NXP Semiconductors | SOT539B | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|双，共源|2.5GHz ~ 2.7GHz|16.5dB|28 V|37A|-|1.2 A|... | ||||||
|
BLF7G27LS-75P,112 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 Single 65V 18A 0.29Ohms | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|双，共源|2.3GHz ~ 2.4GHz|17dB|28 V|18A|-|650 mA|12W|6... | ||||||
|
|
BLF7G27LS-75P,118 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 Single 65V 18A 0.29Ohms | ||
| 参数：Ampleon USA Inc.|卷带（TR）|-|停产|LDMOS|双，共源|2.3GHz ~ 2.4GHz|17dB|28 V|18A|-|650 mA|1... | ||||||
|
|
BLF7G27LS-90P,112 | NXP Semiconductors | LDMOST | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|双，共源|2.5GHz ~ 2.7GHz|18.5dB|28 V|18A|-|720 mA|16W... | ||||||
78/82 首页 上页 [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] 下页 尾页
