| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
STB7NC80ZT4 | STMicroelectronics | D2PAK | MOSFET TO-263 | ||
| 参数:制造商:STMicroelectronics,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 25 V,漏... | ||||||
|
STB7NK80Z-1 | STMicroelectronics | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电... | ||||||
|
STB7NK80ZT4 | STMicroelectronics | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | 2,000 | MOSFET N-Ch 800 Volt 5.2A Zener SuperMESH | |
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电... | ||||||
|
STB80N20M5 | STMicroelectronics | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-Ch 200V 0.019 61A Mdmesh V | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,漏极连续电流... | ||||||
|
STB80NE03L-06T4 | STMicroelectronics | D2PAK | MOSFET N-Ch 30 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压... | ||||||
|
STB80NE06-10 | STMicroelectronics | D2PAK | MOSFET RO 511-STB80NF06 | ||
| 参数:制造商:STMicroelectronics,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
|
STB80NE06-10T4 | STMicroelectronics | D2PAK | MOSFET N-CH 60V 80A | ||
| 参数:制造商:STMicroelectronics,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
|
STB80NF03L-04 | STMicroelectronics | D2PAK | MOSFET N-Ch 30 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压... | ||||||
|
STB80NF03L-04-1 | STMicroelectronics | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET N-Ch, 30V-0.0035ohms 80A | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压... | ||||||
|
STB80NF03L-04T4 | STMicroelectronics | D2PAK | MOSFET N-Ch 30 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压... | ||||||
|
STB80NF06T4 | STMicroelectronics | D2PAK | MOSFET N-Ch 60 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压... | ||||||
|
STB80NF10T4 | STMicroelectronics | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-Ch 100 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电... | ||||||
|
STB80NF12T4 | STMicroelectronics | D2PAK | MOSFET N-Ch 120 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:120 V,闸/源击穿电... | ||||||
|
STB80NF55-06-1 | STMicroelectronics | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET N-Ch, 55V-0.005ohms 80A | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压... | ||||||
|
STB80NF55-06T4 | STMicroelectronics | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-Ch 55 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压... | ||||||
|
STB80NF55-08T4 | STMicroelectronics | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-Ch 55 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压... | ||||||
|
STB80NF55L-06T4 | STMicroelectronics | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-Ch, 55V-0.005ohms 80A | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压... | ||||||
|
STB80NF55L-08-1 | STMicroelectronics | TO-262-3,长引线,I2Pak,TO-262AA | 2,338 | MOSFET N-Ch, 55V-0.0065ohms 80A | |
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压... | ||||||
|
STB80NF55L-08T4 | STMicroelectronics | D2PAK | MOSFET N-Ch 55 Volt 80 Amp | ||
| 参数:制造商:STMicroelectronics,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压... | ||||||
|
STB80NF75LT4 | STMicroelectronics | D2PAK | MOSFET | ||
| 参数:制造商:STMicroelectronics,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,闸/源击穿电压:+/- 16 V,漏极... | ||||||
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