| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
TPC8132,LQ(S | Toshiba | 8-SOIC(0.154",3.90mm 宽) | 2,100 | MOSFET N-Ch -30V FET 1650pF -7A 1.9W | |
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPC8133,LQ(S | Toshiba | 8-SOP | MOSFET N-Ch -40V FET 1650pF -9A 1.9W | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPC8134,LQ(S | Toshiba | 8-SOIC(0.154",3.90mm 宽) | MOSFET N-Ch -40V FET 1650pF -5A 1.9W 20nC | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPC8207(TE12L,Q,M) | Toshiba | SOP-8 | MOSFET N-ch 20V 6A 0.020 ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏极连续电... | ||||||
|
TPC8208(TE12L,Q,M) | Toshiba | 8-SOP(5.5x6.0) | MOSFET N-ch 20V 5A 0.050 ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏极连续电... | ||||||
|
|
TPC8210(TE12L,Q,M) | Toshiba | SOP-8 | MOSFET MOSFET N-Ch Dual 30V 8A Rdson=0.015Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPC8211(TE12L,Q,M) | Toshiba | 8-SOP(5.5x6.0) | MOSFET MOSFET N-Ch Dual 30V 6A Rdson=0.036Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,电阻汲极/源极 RDS(导通):44... | ||||||
|
TPC8212-H(TE12LQ,M | Toshiba | 8-SOP(5.5x6.0) | MOSFET MOSFET N-Ch Dual 30V 6A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPC8213-H(TE12LQ,M | Toshiba | 8-SOP(5.5x6.0) | MOSFET MOSFET N-Ch Dual 60V 5A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPC8216-H(TE12L,QM | Toshiba | MOSFET MOSFET N-CH Dual 30V, 6.4A | |||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:3000,... | ||||||
|
TPC8221-H,LQ(S | Toshiba | 8-SOP | MOSFET MOSFET, Dual, SOP-8 | ||
| 参数:制造商:Toshiba,... | ||||||
|
TPC8221-HLQ(S | Toshiba | MOSFET N-Ch Dual 30V 6A 1.5W 12nC 0.029 | |||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPC8223-H,LQ(S | Toshiba | 8-SOP | MOSFET N-Ch Dual 30V 9A 1.5W 1190pF | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPC8404(TE12L,Q) | Toshiba | SOP-8 | MOSFET MOSFET N-Ch PCh 250V 1.1A Nch 0.9A Pch | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:250 V,闸/源击穿电压:+/-... | ||||||
|
TPC8405(TE12L,Q,M) | Toshiba | 8-SOP(5.5x6.0) | MOSFET MOSFET N-Ch P-Ch 30V | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:- 30 V,电阻汲极/源极 RD... | ||||||
|
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TPC8406-H(TE12LQ,M | Toshiba | SOP-8 | MOSFET MOSFET N-Ch P-Ch 40V | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- ... | ||||||
|
TPC8407,LQ(S | Toshiba | 8-SOP | MOSFET N and P Ch 30V FET 9A 1.5W 1190pF | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPC8408,LQ(S | Toshiba | 8-SOP | MOSFET N and P Ch 40V FET 6.1A 1.5W 850pF | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPC8A01(TE12L,Q) | Toshiba | SOP-8 | 151 | MOSFET PW TR with SBD 30v 8.6A 1.5W 11mOhms | |
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPC8A02-H(TE12L,Q) | Toshiba | 8-SOIC(0.173",4.40mm 宽) | MOSFET MOSFET N-Ch SBD 30V 16A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
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