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点击查看TPC8132,LQ(S参考图片 TPC8132,LQ(S Toshiba 8-SOIC(0.154",3.90mm 宽) 2,100 MOSFET N-Ch -30V FET 1650pF -7A 1.9W
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,...
点击查看TPC8133,LQ(S参考图片 TPC8133,LQ(S Toshiba 8-SOP MOSFET N-Ch -40V FET 1650pF -9A 1.9W
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,...
点击查看TPC8134,LQ(S参考图片 TPC8134,LQ(S Toshiba 8-SOIC(0.154",3.90mm 宽) MOSFET N-Ch -40V FET 1650pF -5A 1.9W 20nC
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,...
TPC8207(TE12L,Q,M) Toshiba SOP-8 MOSFET N-ch 20V 6A 0.020 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏极连续电...
点击查看TPC8208(TE12L,Q,M)参考图片 TPC8208(TE12L,Q,M) Toshiba 8-SOP(5.5x6.0) MOSFET N-ch 20V 5A 0.050 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏极连续电...
点击查看TPC8210(TE12L,Q,M)参考图片 TPC8210(TE12L,Q,M) Toshiba SOP-8 MOSFET MOSFET N-Ch Dual 30V 8A Rdson=0.015Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏...
点击查看TPC8211(TE12L,Q,M)参考图片 TPC8211(TE12L,Q,M) Toshiba 8-SOP(5.5x6.0) MOSFET MOSFET N-Ch Dual 30V 6A Rdson=0.036Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,电阻汲极/源极 RDS(导通):44...
点击查看TPC8212-H(TE12LQ,M参考图片 TPC8212-H(TE12LQ,M Toshiba 8-SOP(5.5x6.0) MOSFET MOSFET N-Ch Dual 30V 6A
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏...
点击查看TPC8213-H(TE12LQ,M参考图片 TPC8213-H(TE12LQ,M Toshiba 8-SOP(5.5x6.0) MOSFET MOSFET N-Ch Dual 60V 5A
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏...
TPC8216-H(TE12L,QM Toshiba MOSFET MOSFET N-CH Dual 30V, 6.4A
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:3000,...
点击查看TPC8221-H,LQ(S参考图片 TPC8221-H,LQ(S Toshiba 8-SOP MOSFET MOSFET, Dual, SOP-8
参数:制造商:Toshiba,...
TPC8221-HLQ(S Toshiba MOSFET N-Ch Dual 30V 6A 1.5W 12nC 0.029
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,...
点击查看TPC8223-H,LQ(S参考图片 TPC8223-H,LQ(S Toshiba 8-SOP MOSFET N-Ch Dual 30V 9A 1.5W 1190pF
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,...
TPC8404(TE12L,Q) Toshiba SOP-8 MOSFET MOSFET N-Ch PCh 250V 1.1A Nch 0.9A Pch
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:250 V,闸/源击穿电压:+/-...
点击查看TPC8405(TE12L,Q,M)参考图片 TPC8405(TE12L,Q,M) Toshiba 8-SOP(5.5x6.0) MOSFET MOSFET N-Ch P-Ch 30V
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:- 30 V,电阻汲极/源极 RD...
点击查看TPC8406-H(TE12LQ,M参考图片 TPC8406-H(TE12LQ,M Toshiba SOP-8 MOSFET MOSFET N-Ch P-Ch 40V
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- ...
点击查看TPC8407,LQ(S参考图片 TPC8407,LQ(S Toshiba 8-SOP MOSFET N and P Ch 30V FET 9A 1.5W 1190pF
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,...
点击查看TPC8408,LQ(S参考图片 TPC8408,LQ(S Toshiba 8-SOP MOSFET N and P Ch 40V FET 6.1A 1.5W 850pF
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,...
点击查看TPC8A01(TE12L,Q)参考图片 TPC8A01(TE12L,Q) Toshiba SOP-8 151 MOSFET PW TR with SBD 30v 8.6A 1.5W 11mOhms
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏...
点击查看TPC8A02-H(TE12L,Q)参考图片 TPC8A02-H(TE12L,Q) Toshiba 8-SOIC(0.173",4.40mm 宽) MOSFET MOSFET N-Ch SBD 30V 16A
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏...

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