图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
PSMN010-100YS,115 | NXP Semiconductors | MOSFET MOSFET N-CH 100V SPAK | ||||
参数:制造商:NXP,RoHS:是,包装形式:Reel,... | ||||||
PSMN010-25YLC,115 | NXP Semiconductors | SC-100,SOT-669 | MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:22.5 V,漏极连续电流:39 A,电阻汲极/源极 RDS(导通):10.6... | ||||||
PSMN010-55D /T3 | NXP Semiconductors | SOT-428 | MOSFET TAPE13 PWR-MOS | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 15 V,漏极连续电... | ||||||
PSMN010-55D,118 | NXP Semiconductors | TO-252-3,DPak(2 引线 + 接片),SC-63 | MOSFET TAPE13 PWR-MOS | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 15 V,漏极连续电... | ||||||
PSMN011-30YL,115 | NXP Semiconductors | LFPAK56,Power-SO8 | MOSFET N-Ch 30V Trench MOS logic level FET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:36 A,电阻汲极/源极 RDS(导通):10.7 m... | ||||||
PSMN011-30YLC,115 | NXP Semiconductors | LFPAK56,Power-SO8 | 13,131 | MOSFET N-CH 30 V 11.6 MOHMS LOGIC LEVEL MOSFET | ||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电流:37 A,电阻汲极/... | ||||||
PSMN011-80YS,115 | NXP Semiconductors | SC-100,SOT-669 | MOSFET N-CHAN 80V 47A | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:80 V,闸/源击穿电压:+/- 20 V,漏极连续电流:47 A,电阻汲极/... | ||||||
PSMN012-100YS,115 | NXP Semiconductors | SC-100,SOT-669 | MOSFET N-CHANNEL 100V STD LEVEL MOSFET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:60 A,电阻汲极... | ||||||
PSMN012-25YLC,115 | NXP Semiconductors | SC-100,SOT-669 | MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,闸/源击穿电压:+/- 20 V,漏极连续电流:33 A,电阻汲极/... | ||||||
PSMN012-60YS,115 | NXP Semiconductors | SC-100,SOT-669 | MOSFET N-CHANNEL 60V STD LEVEL MOSFET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极连续电流:59 A,电阻汲极/... | ||||||
PSMN012-80BS,118 | NXP Semiconductors | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-CH 80 V 11MOHM MOSFET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:73 V,闸/源击穿电压:1 V,漏极连续电流:74 A,电阻汲极/源极 RD... | ||||||
PSMN012-80PS,127 | NXP Semiconductors | TO-220AB | MOSFET N-CH 80V 11 mOhm Standard MOSFET | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:80 V,漏极连续电流:74 A,电阻汲极/源极 RD... | ||||||
PSMN013-100BS,118 | NXP Semiconductors | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | 725 | MOSFET Std N-chanMOSFET | ||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:68 A,电阻汲极... | ||||||
PSMN013-100ES,127 | NXP Semiconductors | I2PAK | MOSFET Single NChannel 100V 272A 170W 30mOhms | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:90 V,漏极连续电流:47 A,电阻汲极/源极 RDS(导通):30 mOh... | ||||||
PSMN013-100PS,127 | NXP Semiconductors | TO-220-3 | 2,532 | MOSFET N-CH 100V STD LEVEL MOSFET | ||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:68 A,电阻汲极... | ||||||
PSMN013-100XS,127 | NXP Semiconductors | TO-220F | MOSFET N-ch 100V 13mA MOSFET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:24.9 A,电阻... | ||||||
PSMN013-30LL,115 | NXP Semiconductors | 8-DFN3333(3.3x3.3) | MOSFET N-CHAN 30V 21A | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电流:21 A,电阻汲极/... | ||||||
PSMN013-30MLC,115 | NXP Semiconductors | LFPAK33 | 97 | MOSFET N-channel MOSFET logic level LFPAK33 | ||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:27 V,闸/源击穿电压:1.95 V,漏极连续电流:39 A,电阻汲极/源极... | ||||||
PSMN013-30YLC,115 | NXP Semiconductors | SC-100,SOT-669 | MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET | |||
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:32 A,电阻汲极/源极 RDS(导通):16.9 m... | ||||||
PSMN013-80YS,115 | NXP Semiconductors | SC-100,SOT-669 | MOSFET N-CH 80V 12.9 mOhm Standard MOSFET | |||
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:80 V,漏极连续电流:60 A,电阻汲极/源极 RD... |
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