购物车0种商品
IC邮购网-IC电子元件采购商城
图片 型号 品牌 封装 数量 描述 PDF资料
PSMN010-100YS,115 NXP Semiconductors MOSFET MOSFET N-CH 100V SPAK
参数:制造商:NXP,RoHS:是,包装形式:Reel,...
点击查看PSMN010-25YLC,115参考图片 PSMN010-25YLC,115 NXP Semiconductors SC-100,SOT-669 MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:22.5 V,漏极连续电流:39 A,电阻汲极/源极 RDS(导通):10.6...
点击查看PSMN010-55D /T3参考图片 PSMN010-55D /T3 NXP Semiconductors SOT-428 MOSFET TAPE13 PWR-MOS
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 15 V,漏极连续电...
点击查看PSMN010-55D,118参考图片 PSMN010-55D,118 NXP Semiconductors TO-252-3,DPak(2 引线 + 接片),SC-63 MOSFET TAPE13 PWR-MOS
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 15 V,漏极连续电...
点击查看PSMN011-30YL,115参考图片 PSMN011-30YL,115 NXP Semiconductors LFPAK56,Power-SO8 MOSFET N-Ch 30V Trench MOS logic level FET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:36 A,电阻汲极/源极 RDS(导通):10.7 m...
点击查看PSMN011-30YLC,115参考图片 PSMN011-30YLC,115 NXP Semiconductors LFPAK56,Power-SO8 13,131 MOSFET N-CH 30 V 11.6 MOHMS LOGIC LEVEL MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电流:37 A,电阻汲极/...
点击查看PSMN011-80YS,115参考图片 PSMN011-80YS,115 NXP Semiconductors SC-100,SOT-669 MOSFET N-CHAN 80V 47A
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:80 V,闸/源击穿电压:+/- 20 V,漏极连续电流:47 A,电阻汲极/...
点击查看PSMN012-100YS,115参考图片 PSMN012-100YS,115 NXP Semiconductors SC-100,SOT-669 MOSFET N-CHANNEL 100V STD LEVEL MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:60 A,电阻汲极...
点击查看PSMN012-25YLC,115参考图片 PSMN012-25YLC,115 NXP Semiconductors SC-100,SOT-669 MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,闸/源击穿电压:+/- 20 V,漏极连续电流:33 A,电阻汲极/...
点击查看PSMN012-60YS,115参考图片 PSMN012-60YS,115 NXP Semiconductors SC-100,SOT-669 MOSFET N-CHANNEL 60V STD LEVEL MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极连续电流:59 A,电阻汲极/...
点击查看PSMN012-80BS,118参考图片 PSMN012-80BS,118 NXP Semiconductors TO-263-3,D2Pak(2 引线 + 接片),TO-263AB MOSFET N-CH 80 V 11MOHM MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:73 V,闸/源击穿电压:1 V,漏极连续电流:74 A,电阻汲极/源极 RD...
点击查看PSMN012-80PS,127参考图片 PSMN012-80PS,127 NXP Semiconductors TO-220AB MOSFET N-CH 80V 11 mOhm Standard MOSFET
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:80 V,漏极连续电流:74 A,电阻汲极/源极 RD...
点击查看PSMN013-100BS,118参考图片 PSMN013-100BS,118 NXP Semiconductors TO-263-3,D2Pak(2 引线 + 接片),TO-263AB 725 MOSFET Std N-chanMOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:68 A,电阻汲极...
点击查看PSMN013-100ES,127参考图片 PSMN013-100ES,127 NXP Semiconductors I2PAK MOSFET Single NChannel 100V 272A 170W 30mOhms
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:90 V,漏极连续电流:47 A,电阻汲极/源极 RDS(导通):30 mOh...
点击查看PSMN013-100PS,127参考图片 PSMN013-100PS,127 NXP Semiconductors TO-220-3 2,532 MOSFET N-CH 100V STD LEVEL MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:68 A,电阻汲极...
点击查看PSMN013-100XS,127参考图片 PSMN013-100XS,127 NXP Semiconductors TO-220F MOSFET N-ch 100V 13mA MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:24.9 A,电阻...
点击查看PSMN013-30LL,115参考图片 PSMN013-30LL,115 NXP Semiconductors 8-DFN3333(3.3x3.3) MOSFET N-CHAN 30V 21A
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电流:21 A,电阻汲极/...
点击查看PSMN013-30MLC,115参考图片 PSMN013-30MLC,115 NXP Semiconductors LFPAK33 97 MOSFET N-channel MOSFET logic level LFPAK33
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:27 V,闸/源击穿电压:1.95 V,漏极连续电流:39 A,电阻汲极/源极...
点击查看PSMN013-30YLC,115参考图片 PSMN013-30YLC,115 NXP Semiconductors SC-100,SOT-669 MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:32 A,电阻汲极/源极 RDS(导通):16.9 m...
点击查看PSMN013-80YS,115参考图片 PSMN013-80YS,115 NXP Semiconductors SC-100,SOT-669 MOSFET N-CH 80V 12.9 mOhm Standard MOSFET
参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:80 V,漏极连续电流:60 A,电阻汲极/源极 RD...

26/1268 首页 上页 [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] 下页 尾页 

IC电子元件查询
IC邮购网电子元件品质保障