| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FDB5800_F085 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET 60V N-Ch PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+... | ||||||
|
|
FDB6021P | Fairchild Semiconductor | TO-263-3，D2Pak（2 引线 + 接片），TO-263AB | MOSFET P-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
FDB6021P_Q | Fairchild Semiconductor | TO-263 | MOSFET P-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
|
FDB6030BL | Fairchild Semiconductor | TO-263-3，D2Pak（2 引线 + 接片），TO-263AB | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDB6030BL_Q | Fairchild Semiconductor | TO-263 | 378 | MOSFET N-Channel PowerTrench | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6030L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6030L_Q | Fairchild Semiconductor | TO-263AB | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6035AL | Fairchild Semiconductor | TO-263AB | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6035AL_Q | Fairchild Semiconductor | TO-263AB | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDB6035L | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDB603AL | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDB603AL_Q | Fairchild Semiconductor | TO-263AB | 369 | MOSFET | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6644 | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
|
|
FDB6644S | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
|
|
FDB6670AL | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6670AL_Q | Fairchild Semiconductor | TO-263AB | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDB6670AS | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET 30V N-Channel PT SyncFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6670S | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：过渡期间，晶体管极性：N-Channel，汲极/源极击穿电压：30 V... | ||||||
|
|
FDB6676 | Fairchild Semiconductor | TO-263AB | MOSFET 30V N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
|
|
FDB6676S | Fairchild Semiconductor | TO-263AB | MOSFET 30V N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
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