| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FDT439N_Q | Fairchild Semiconductor | SOT-223 | MOSFET SOT-223 N-CH 30V | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 8 ... | ||||||
|
FDT457N | Fairchild Semiconductor | TO-261-4，TO-261AA | 20,642 | MOSFET SOT-223 N-CH 30V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDT458P | Fairchild Semiconductor | SOT-223-4 | MOSFET 30V P-Ch PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
FDT459N | Fairchild Semiconductor | SOT-223-4 | 378 | MOSFET SOT-223 N-CH 30V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDT461N | Fairchild Semiconductor | SOT-223-4 | MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸... | ||||||
|
FDT55AN06LA0 | Fairchild Semiconductor | TO-261-4，TO-261AA | MOSFET 60V N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
|
FDT86102LZ | Fairchild Semiconductor | TO-261-4，TO-261AA | 6,749 | MOSFET 100V N-Channel PowerTrench MOSFET | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，漏极连续电流：6.6 A，... | ||||||
|
|
FDT86106LZ | Fairchild Semiconductor | TO-261-4，TO-261AA | 21,601 | MOSFET 100V N-Channel PowerTrench MOSFET | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，漏极连续电流：3.2 A，... | ||||||
|
FDT86113LZ | Fairchild Semiconductor | TO-261-4，TO-261AA | 57,779 | MOSFET 100V N-Channel PowerTrench MOSFET | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，漏极连续电流：3.3 A，... | ||||||
|
|
FDT86244 | Fairchild Semiconductor | SOT-223-4 | 292 | MOSFET 150V N-Channel PowerTrench MOSFET | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，漏极连续电流：2.8 A，... | ||||||
|
|
FDT86246 | Fairchild Semiconductor | TO-261-4，TO-261AA | 6,946 | MOSFET 150V N-Channel PowerTrench MOSFET | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，漏极连续电流：2 A，电阻... | ||||||
|
|
FDT86256 | Fairchild Semiconductor | TO-261-4，TO-261AA | 3,883 | MOSFET 150V NCh MOSFET PowerTrench | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，闸/源击穿电压：20 V，... | ||||||
|
FDU044AN03L | Fairchild Semiconductor | I-PAK | MOSFET 30V N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDU068AN03L | Fairchild Semiconductor | I-PAK | MOSFET N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDU2572 | Fairchild Semiconductor | TO-251-3 短引线，IPak，TO-251AA | MOSFET 150V 29a 0.056 Ohm | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，闸... | ||||||
|
FDU2572_Q | Fairchild Semiconductor | IPAK | MOSFET 150V 29a 0.056 Ohm | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，闸... | ||||||
|
|
FDU3580 | Fairchild Semiconductor | I-PAK | MOSFET 80V N-Ch PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/... | ||||||
|
|
FDU3580_Q | Fairchild Semiconductor | TO-251 | MOSFET 80V N-Ch PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDU3706 | Fairchild Semiconductor | I-PAK | MOSFET 20V N-Ch PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
FDU3N40TU | Fairchild Semiconductor | TO-251-3 短引线，IPak，TO-251AA | 4,926 | MOSFET 400V N-Channel | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：400 V，闸... | ||||||
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