| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
|
DMN5010VAK-7 | Diodes Inc. | SOT-563 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 12... | ||||||
|
|
DMN55D0UT-7 | Diodes Inc. | SOT-523 | 5,987 | MOSFET .2W 50V .16A | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 12... | ||||||
|
DMN5L06-7 | Diodes Inc. | SOT-23-3 | MOSFET N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN5L06DMK-7 | Diodes Inc. | SOT-26 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN5L06DW-7 | Diodes Inc. | SOT-363 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN5L06DWK-7 | Diodes Inc. | SOT-363 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN5L06K-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | 323 | MOSFET N-Channel | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN5L06T-7 | Diodes Inc. | SOT-523 | MOSFET N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN5L06TK-7 | Diodes Inc. | SOT-523 | MOSFET .15W 50V .28A | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN5L06V-7 | Diodes Inc. | SOT-563 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN5L06VA-7 | Diodes Inc. | SOT-563 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN5L06VAK-7 | Diodes Inc. | SOT-563 | 2,955 | MOSFET 20V 280mA | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN5L06VK-7 | Diodes Inc. | SOT-563 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN5L06W-7 | Diodes Inc. | SOT-323 | MOSFET N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN5L06WK-7 | Diodes Inc. | SOT-323 | 29 | MOSFET N-Channel | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20... | ||||||
|
|
DMN601DMK-7 | Diodes Inc. | SOT-26 | 86,490 | MOSFET Dual N-Channel | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN601DWK-7 | Diodes Inc. | SOT-363 | 482,462 | MOSFET Dual N-Channel | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN601K-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | 100,043 | MOSFET N-Channel | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN601TK-7 | Diodes Inc. | SOT-523 | MOSFET N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... | ||||||
|
DMN601VK-7 | Diodes Inc. | SOT-563 | MOSFET Dual N-Channel | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... | ||||||
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