| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
IRFR420A | Vishay/Siliconix | DPAK | MOSFET N-Chan 500V 3.3 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
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IRFR420APBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | 6,297 | MOSFET N-Chan 500V 3.3 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
|
IRFR420ATRLPBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | MOSFET N-Chan 500V 3.3 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
|
IRFR420ATRPBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | 8,869 | MOSFET N-Chan 500V 3.3 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
|
IRFR420BTF | Fairchild Semiconductor | TO-220 | MOSFET 500V N-Channel B-FET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸... | ||||||
|
IRFR420BTM | Fairchild Semiconductor | TO-252AA | MOSFET 500V N-Channel B-FET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸... | ||||||
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IRFR420PBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | 117 | MOSFET N-Chan 500V 2.4 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
IRFR420T_R4941 | Fairchild Semiconductor | MOSFET | |||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,... | ||||||
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IRFR420TR | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | MOSFET N-Chan 500V 2.4 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
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IRFR420TRL | Vishay/Siliconix | D-Pak | MOSFET N-Chan 500V 2.4 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
IRFR420TRLPBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | 2,943 | MOSFET N-Chan 500V 2.4 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
IRFR420TRPBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | 144 | MOSFET N-Chan 500V 2.4 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
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IRFR420TRRPBF | Vishay/Siliconix | D-Pak | MOSFET N-Chan 500V 2.4 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
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IRFR430A | Vishay/Siliconix | DPAK | MOSFET N-Chan 500V 5.0 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
|
IRFR430APBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | 2,997 | MOSFET N-Chan 500V 5.0 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
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IRFR430ATR | Vishay/Siliconix | DPAK | MOSFET N-Chan 500V 5.0 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
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IRFR430ATRLPBF | Vishay/Siliconix | D-Pak | MOSFET N-Chan 500V 5.0 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
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IRFR430ATRPBF | Vishay/Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | MOSFET N-Chan 500V 5.0 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
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IRFR430ATRR | Vishay/Siliconix | DPAK | MOSFET N-Chan 500V 5.0 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
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IRFR430ATRRPBF | Vishay/Siliconix | D-Pak | MOSFET N-Chan 500V 5.0 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏... | ||||||
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