图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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FZ900R12KP4 | Infineon Technologies | IGBT 模块 IGBT 1200V 900A | |||
参数:制造商:Infineon,... | ||||||
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FZ3600R17HE4 | Infineon Technologies | IGBT 模块 IGBT 1700V 3600A | |||
参数:制造商:Infineon,RoHS:否,... | ||||||
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FZ3600R17HP4 | Infineon Technologies | IGBT 模块 IGBT 1700V 3600A | |||
参数:制造商:Infineon,RoHS:否,... | ||||||
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FZ3600R17HP4_B2 | Infineon Technologies | IGBT 模块 IGBT 1700V 3600A | |||
参数:制造商:Infineon,... | ||||||
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FZ3600R17KE3 | Infineon Technologies | IHM190 | IGBT 模块 N-CH 1.7KV 4.8KA | ||
参数:制造商:Infineon,产品:IGBT Silicon Modules,配置:Triple,集电极—发射极最大电压 VCEO:1700 V,在25 C的连续集... | ||||||
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FZ3600R17KE3_B2 | Infineon Technologies | IGBT 模块 IGBT-MODULES | |||
参数:制造商:Infineon,产品:IGBT Silicon Modules,... | ||||||
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FZ400R12KE3 | Infineon Technologies | 62 mm | IGBT 模块 1200V 400A SINGLE | ||
参数:制造商:Infineon,产品种类:IGBT 模块,RoHS:否,产品:IGBT Silicon Modules,配置:Single,集电极—发射极最大电压 V... | ||||||
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FZ400R12KE3B1 | Infineon Technologies | 62 mm | IGBT 模块 N-CH 1.2KV 650A | ||
参数:制造商:Infineon,产品:IGBT Silicon Modules,配置:Single Dual Collector Dual Emitter,集电极—发... | ||||||
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FZ1200R33KL2C | Infineon Technologies | IHV190 | IGBT 模块 N-CH 3.3KV 2.3KA | ||
参数:制造商:Infineon,产品:IGBT Silicon Modules,配置:Triple,集电极—发射极最大电压 VCEO:3300 V,在25 C的连续集... | ||||||
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FZ1200R33KL2C_B5 | Infineon Technologies | IHV190 | IGBT 模块 N-CH 3.3KV 2.3KA | ||
参数:制造商:Infineon,产品:IGBT Silicon Modules,配置:Triple,集电极—发射极最大电压 VCEO:3300 V,在25 C的连续集... | ||||||
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FZ1500R33HE3 | Infineon Technologies | IGBT 模块 IGBT 3300V 1500A | |||
参数:制造商:Infineon,... | ||||||
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FZ1500R33HL3 | Infineon Technologies | IHVB190 | IGBT 模块 N-CH 3.3KV 1.5KA | ||
参数:制造商:Infineon,产品:IGBT Silicon Modules,配置:Triple,集电极—发射极最大电压 VCEO:3300 V,在25 C的连续集... | ||||||
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FZ1600R12HP4 | Infineon Technologies | IGBT 模块 IGBT 1200V 1600A | |||
参数:制造商:Infineon,RoHS:否,... | ||||||
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FSAM30SH60A | Fairchild Semiconductor | 32-PowerDIP 模块(1.370",34.80mm) | IGBT 模块 600V/30A/ SPM2 | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 模块,RoHS:是,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电... | ||||||
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FSAM30SM60A | Fairchild Semiconductor | 32-PowerDIP 模块(1.370",34.80mm) | IGBT 模块 600V/30A/ SPM2 | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 模块,RoHS:是,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电... | ||||||
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FSAM30SM60SL | Fairchild Semiconductor | 32-PowerDIP 模块(1.370",34.80mm) | IGBT 模块 600V/30A Smart Power | ||
参数:制造商:Fairchild Semiconductor,RoHS:是,包装形式:Tube,工厂包装数量:8,... | ||||||
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FSAM75SM60A | Fairchild Semiconductor | 32-PowerDIP 模块(1.370",34.80mm) | IGBT 模块 600V -75A SMART POWER MODULE | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 模块,RoHS:是,产品:IGBT Silicon Modules,配置:3-Pha... | ||||||
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FSAM75SM60SL | Fairchild Semiconductor | IGBT 模块 600V/75A Smart Power | |||
参数:制造商:Fairchild Semiconductor,RoHS:是,包装形式:Tube,工厂包装数量:8,... | ||||||
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FSBF15CH60BT | Fairchild Semiconductor | 27-PowerDIP 模块(1.205",30.60mm) | IGBT 模块 Smart Power Module | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 模块,RoHS:是,产品:IGBT Silicon Modules,配置:3-Pha... | ||||||
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FSBF15CH60BTL | Fairchild Semiconductor | 27-PowerDIP 模块(1.205",30.60mm) | IGBT 模块 Smart Power Module | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 模块,RoHS:是,包装形式:Tube,工厂包装数量:10,... |
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