图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
FGA60N65SMD | Fairchild Semiconductor | TO-3P | 454 | IGBT 晶体管 650V, 60A Field Stop IGBT | ||
参数:制造商:Fairchild Semiconductor,RoHS:是,集电极—发射极最大电压 VCEO:650 V,集电极—射极饱和电压:1.9 V,栅极/发射... | ||||||
FGA70N30TDTU | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 300V 70A PDP IGBT | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:300 ... | ||||||
FGA70N30TTU | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 300V PDP | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:300 ... | ||||||
FGA70N33BTDTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 N-Ch/ 70A 330V PDP | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:330 ... | ||||||
FGA90N30DTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 TBD | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:300 ... | ||||||
FGA90N30TU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 TBD | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:300 ... | ||||||
FGA90N33ATDTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 330V 90A PDP Trench | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:330 ... | ||||||
FGA90N33ATTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 330V 90A PDP Trench | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:330 ... | ||||||
FGAF20N60SMD | Fairchild Semiconductor | TO-3PF | IGBT 晶体管 600 V 40 A 62.5 W | |||
参数:制造商:Fairchild Semiconductor,RoHS:是,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:1.9 V,栅极/发射... | ||||||
FGAF40N60SMD | Fairchild Semiconductor | TO-3PF | IGBT 晶体管 600 V 80 A 79 W | |||
参数:制造商:Fairchild Semiconductor,RoHS:是,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:2.1 V,栅极/发射... | ||||||
FGAF40N60UFDTU | Fairchild Semiconductor | TO-3PF-3 | 198 | IGBT 晶体管 Ultrafast | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGAF40N60UFTU | Fairchild Semiconductor | TO-3PF | 104 | IGBT 晶体管 40A/600V/ IGBT | ||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGB20N60SF | Fairchild Semiconductor | D2PAK(TO-263) | 139 | IGBT 晶体管 600V, 20A Field Stop IGBT | ||
参数:制造商:Fairchild Semiconductor,RoHS:是,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:2.2 V,栅极/发射... | ||||||
FGB20N60SFD | Fairchild Semiconductor | D2PAK(TO-263) | IGBT 晶体管 600V 20A Field Stop | |||
参数:制造商:Fairchild Semiconductor,RoHS:是,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:2.8 V,栅极/发射... | ||||||
FGB20N6S2 | Fairchild Semiconductor | D2PAK(TO-263) | IGBT 晶体管 Sgl N-Ch 600V | |||
参数:制造商:Fairchild Semiconductor,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
FGB20N6S2D | Fairchild Semiconductor | D2PAK(TO-263) | IGBT 晶体管 Comp N-Ch 600V | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGB20N6S2DT | Fairchild Semiconductor | TO-263AB-3 | IGBT 晶体管 600V N-Ch IGBT SMPS II Series | |||
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
FGB20N6S2T | Fairchild Semiconductor | TO-263AB-3 | IGBT 晶体管 600V N-Channel IGBT SMPS II Series | |||
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
FGB30N6S2 | Fairchild Semiconductor | D2PAK(TO-263) | IGBT 晶体管 Sgl 600V Ch | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
FGB30N6S2D | Fairchild Semiconductor | D2PAK(TO-263) | IGBT 晶体管 Dl 600V Size 3 N-Ch | |||
参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... |
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