| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
GUVC-T10GD-L | Genicom Co., Ltd. | TO-46-2，金属罐 | 296 | UV-C SENSOR (220-280NM) | |
| 参数：Genicom Co., Ltd.|托盘|-|在售|-|紫外线（UV）|220nm ~ 280nm|肖特基|0.05 A/W @ 254nm|-|2 V|20n... | ||||||
|
008-2171-112 | Advanced Photonix | TO-46-3 透镜顶部金属罐 | 124 | UV-C SENSOR, ALGAN, TO-46 | |
| 参数：Advanced Photonix|托盘|-|在售|220nm ~ 280nm|紫外线（UV）|-|肖特基|0.06 A/W @ 254nm|1ns|5 V|1... | ||||||
|
KPDE030-H8-B | CEL | TO-206AA，TO-18-3 金属罐 | 229 | INGAAS PHOTODIODE 300UM 900-170 | |
| 参数：CEL|袋|-|在售|-|-|400nm ~ 1700nm|-|0.9 A/W @ 1310nm，1 A/W @ 1550nm|-|20 V|100pA|300... | ||||||
|
057-11-21-011 | Advanced Photonix | - | 242 | SENSOR PHOTODIODE 660NM TO46 | |
| 参数：Advanced Photonix|散装|-|在售|660nm|红色|350nm ~ 1100nm|引脚|0.55 A/W @ 900nm|13ns|75 V|... | ||||||
|
AFBR-S4K11C0125B | Broadcom Limited | 4-FBGA，CSPBGA | 134 | SIPM, 1X1MM, MP25, WB, BGA | |
| 参数：Broadcom Limited|散装|AFBR|在售|430nm|-|-|雪崩|-|110ps|25.5 V|11nA，64nA|1mm2|-|-40°C ~... | ||||||
|
AFBR-S4K33C0135L | Broadcom Limited | 12-WFBGA，CSPBGA | 121 | SIPM, 3X3MM, MP35, WL, BGA | |
| 参数：Broadcom Limited|散装|AFBR|在售|430nm|-|-|雪崩|-|-|30.25 V|85nA，349nA，636nA|9mm2|-|-40... | ||||||
|
FCI-INGAAS-1500 | OSI Optoelectronics, Inc. | TO-46-3 透镜顶部金属罐 | 248 | 1.5 MM DIAMETER INGAAS PHOTODIOD | |
| 参数：OSI Optoelectronics, Inc.|托盘|FCI-InGaAs-XXX-X|在售|-|-|-|-|0.9 A/W @ 1310nm，0.95 A... | ||||||
|
MICROFC-60035-SMT-TR1 | onsemi | 4-SMD，无引线 | 323 | SENSOR PHOTODIODE 420NM 4SMD | |
| 参数：onsemi|带|C-SERIES SIPM|在售|420nm|蓝色|300nm ~ 950nm|雪崩|-|1ns|24.7 V|618nA|36mm2|-|-... | ||||||
|
PIN-10DP/SB | OSI Optoelectronics, Inc. | 模块 | 78 | 100 MM SQ. SUPER BLUE ENHANCED S | |
| 参数：OSI Optoelectronics, Inc.|滤毒罐|Photovoltaic|在售|410nm|-|-|平面扩散|0，2 A/W @ 410nm|2μs... | ||||||
|
QD7-0-SD | OSI Optoelectronics, Inc. | TO-5 变体，5 引线，透镜顶金属罐 | 78 | 3 MM DIAMETER QUADRANT SILICON P | |
| 参数：OSI Optoelectronics, Inc.|散装|O|在售|900nm|-|-|-|0.54 A/W @ 900nm|10ns|30 V|15nA|7m... | ||||||
|
AXUV100TF400 | Opto Diode Corp | - | 36 | SENSOR ELECTRON DETECTION 100MM | |
| 参数：Opto Diode Corp|散装|AXUV|在售|-|-|-|-|-|250ns|10 V|-|100mm2|-|-10°C ~ 40°C|通孔|-... | ||||||
|
C30659-1060E-R8BH | Excelitas Technologies | TO-8 型，12 引线 | 27 | SI APD + AMP, TO-8, 200MHZ, HIGH | |
| 参数：Excelitas Technologies|散装|C30659|在售|1064nm|-|400nm ~ 1100nm|雪崩|370 KV/W @ 900nm，... | ||||||
|
|
C30662EH | Excelitas Technologies | TO-18-2 金属罐 | 78 | INGAAS APD 200UM TO-18 | |
| 参数：Excelitas Technologies|盒|C30662|在售|1550nm|-|1100nm ~ 1700nm|雪崩|9.3 A/W @ 1550nm|... | ||||||
|
C30659-900-R8AH | Excelitas Technologies | TO-8 型，12 引线 | 30 | SI APD + AMP, TO-8, 50MHZ | |
| 参数：Excelitas Technologies|散装|C30659|在售|900nm|-|400nm ~ 1100nm|雪崩|2700 KV/W @ 830nm，... | ||||||
|
VEMD4010X01 | Vishay Semiconductor Opto Division | 0805（2012 公制） | 12,406 | PHOTO PIN DIODE IN LOW PROFILE 0 | |
| 参数：Vishay Semiconductor Opto Division|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|Automotive, ... | ||||||
|
VEMD2023X01 | Vishay Semiconductor Opto Division | 2-SMD | 28,283 | PHOTODIODE 430 TO 1100 NM | |
| 参数：Vishay Semiconductor Opto Division|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|Automotive, ... | ||||||
|
1541201EEA400 | Würth Elektronik | 1206（3216 公制） | 3,067 | SENSOR PHOTODIODE 940NM 1206 | |
| 参数：Würth Elektronik|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|WL-SDCB|在售|940nm|-|700nm ~ 110... | ||||||
|
VEMD5010X01 | Vishay Semiconductor Opto Division | 4-SMD，无引线裸焊盘 | 19,724 | PHOTODIODE 780 TO 1050 NM | |
| 参数：Vishay Semiconductor Opto Division|卷带（TR）,剪切带（CT）,Digi-Reel? 得捷定制卷带|Automotive, ... | ||||||
|
1540031EC4590 | Würth Elektronik | 径向 | 1,933 | WL-TDRB THT PHOTODIODE ROUND BLA | |
| 参数：Würth Elektronik|散装|WL-TDRB|在售|940nm|-|700nm ~ 1100nm|-|-|-|60 V|10nA（最大）|-|45°|... | ||||||
|
|
0050-3111-111 | Advanced Photonix | TO-46-3 透镜顶部金属罐 | 98 | INGAAS, 0.25MM AA, TO-46 ISO | |
| 参数：Advanced Photonix|托盘|-|在售|900nm ~ 1700nm|红外（NIR）/红|-|-|0.83 A/W @ 1300nm，0.95 A/... | ||||||
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