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TE Connectivity / Holsworthy

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CRGH2010J6M2 TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD 6.2M Ohms 5% 200ppm 1.0 Watt 2010
参数:制造商:TE Connectivity,电阻:6.2 MOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - ...
CRGH2010J6R2 TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 6R2 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:6.2 Ohms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外...
CRGH2010J750R TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD 750 Ohms 5% 100ppm 1.0 Watt 2010
参数:制造商:TE Connectivity,电阻:750 Ohms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - i...
CRGH2010J75K TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 75K 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:75 kOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外...
CRGH2010J75R TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 75R 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:75 Ohms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳...
CRGH2010J7M5 TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD 7.5M Ohms 5% 200ppm 1.0 Watt 2010
参数:制造商:TE Connectivity,电阻:7.5 MOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - ...
CRGH2010J82K TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 82K 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:82 kOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外...
CRGH2010J82R TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 82R 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:82 Ohms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳...
CRGH2010J8R2 TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 8R2 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:8.2 Ohms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外...
CRGH2010J910K TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 910K 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:910 kOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,...
CRGH2010J91K TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD CRGH2010 5% 91K 1W
参数:制造商:TE Connectivity,RoHS:是,电阻:91 kOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外...
CRGH2010J9K1 TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD 9.1 Ohms 5% 100ppm 1.0 Watt 2010
参数:制造商:TE Connectivity,电阻:9.1 kOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - ...
CRGH2010J9M1 TE Connectivity / Holsworthy 2010 (5025 metric) 厚膜电阻器 - SMD 9.1M Ohms 5% 200ppm 1.0 Watt 2010
参数:制造商:TE Connectivity,电阻:9.1 MOhms,容差:5 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - ...
CRGH2512F100K TE Connectivity / Holsworthy 2512 (6432 metric) 厚膜电阻器 - SMD CRGH2512 1% 100K 2W
参数:制造商:TE Connectivity,RoHS:是,电阻:100 kOhms,容差:1 %,功率额定值:1 W,电压额定值:200 V,外壳代码 - in:2...
CRGH2512F100R TE Connectivity / Holsworthy 2512 (6432 metric) 厚膜电阻器 - SMD CRGH2512 1% 100R 2W
参数:制造商:TE Connectivity,RoHS:是,电阻:100 Ohms,容差:1 %,功率额定值:1 W,电压额定值:200 V,外壳代码 - in:25...
CRGH2512F102R TE Connectivity / Holsworthy 2512 (6432 metric) 厚膜电阻器 - SMD 102 Ohms 1% 100ppm 2.0 Watt 2512
参数:制造商:TE Connectivity,电阻:102 Ohms,容差:1 %,功率额定值:1 W,电压额定值:200 V,外壳代码 - in:2512,外壳代码...
CRGH2512F105K TE Connectivity / Holsworthy 2512 (6432 metric) 厚膜电阻器 - SMD CRGH2512 1% 105K 2W
参数:制造商:TE Connectivity,RoHS:是,电阻:105 kOhms,容差:1 %,功率额定值:1 W,电压额定值:200 V,外壳代码 - in:2...
CRGH2512F105R TE Connectivity / Holsworthy 2512 (6432 metric) 厚膜电阻器 - SMD 105 Ohms 1% 100ppm 2.0 Watt 2512
参数:制造商:TE Connectivity,电阻:105 Ohms,容差:1 %,功率额定值:1 W,电压额定值:200 V,外壳代码 - in:2512,外壳代码...
CRGH2512F107R TE Connectivity / Holsworthy 2512 (6432 metric) 厚膜电阻器 - SMD CRGH2512 1% 107R 2W
参数:制造商:TE Connectivity,RoHS:是,电阻:107 Ohms,容差:1 %,功率额定值:1 W,电压额定值:200 V,外壳代码 - in:25...
CRGH2512F10K TE Connectivity / Holsworthy 2512 (6432 metric) 厚膜电阻器 - SMD 10 Ohms 1% 100ppm 2.0 Watt 2512
参数:制造商:TE Connectivity,电阻:10 kOhms,容差:1 %,功率额定值:1 W,电压额定值:200 V,外壳代码 - in:2512,外壳代码...

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