Infineon Technologies
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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SPB42N03S2L-13G | Infineon Technologies | TO-263 | MOSFET TRAN MOSFET N-CH 30V 42A 3-PIN TO-263 | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,... | ||||||
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SPB73N03S2L-08G | Infineon Technologies | TO-263 | MOSFET TRAN MOSFET N-CH 30V 73A 3-PIN TO-263 | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,... | ||||||
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SPB80N03S2-03 G | Infineon Technologies | TO-263 | MOSFET TRAN MOSFET N-CH 30V 80A 3-PIN TO-263 | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,... | ||||||
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SPB80N03S2L-03G | Infineon Technologies | TO-263 | MOSFET TRAN MOSFET N-CH 30V 80A 3-PIN TO-263 | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,... | ||||||
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SPB80N03S2L-05G | Infineon Technologies | TO-263 | MOSFET TRAN MOSFET N-CH 30V 80A 3-PIN TO-263 | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,... | ||||||
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SPB80N06S08 | Infineon Technologies | TO-263 | MOSFET | ||
| 参数:制造商:Infineon,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,漏极连续电流:80 A,电阻汲极/源极... | ||||||
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SPB80N06S-08 | Infineon Technologies | TO-263 | MOSFET N-CH 55V 80 A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,... | ||||||
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SPB80N10L G | Infineon Technologies | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-CH 100V 80A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPB80P06P G | Infineon Technologies | TO-263 | 987 | MOSFET P-CH 60V 80A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,闸/源击穿电压:+/- 20 ... | ||||||
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SPA02N80C3 | Infineon Technologies | TO-220FP | 686 | MOSFET COOL MOS PWR TRANS 800V 2A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA03N60C3 | Infineon Technologies | TO-220FP | 503 | MOSFET COOL MOS N-CH 650V 2.8A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA04N50C3 | Infineon Technologies | TO-220AB | 400 | MOSFET COOL MOS N-CH 500V 4.5A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA04N60C3 | Infineon Technologies | TO-220FP | 411 | MOSFET COOL MOS N-CH 650V 4.5A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA04N80C3 | Infineon Technologies | TO-220FP | 235 | MOSFET COOL MOS PWR TRANS 800V 4A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA06N60C3 | Infineon Technologies | TO-220FP | MOSFET COOL MOS N-CH 650V 6.2A | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA06N80C3 | Infineon Technologies | TO-220FP | 163 | MOSFET MOSFET N-Channel | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA07N60C3 | Infineon Technologies | TO-220FP | 7350 | MOSFET COOL MOS N-CH 600V 7.3A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA07N60CFD | Infineon Technologies | TO-220FP | MOSFET COOL MOS PWR TRANS 650V 0.7 Ohms | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA07N65C3 | Infineon Technologies | TO-220FP | MOSFET COOL MOS | ||
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
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SPA08N50C3 | Infineon Technologies | TO-220FP | 26 | MOSFET COOL MOS N-CH 560V 7.6A | |
| 参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:560 V,闸/源击穿电压:+/- 20 V... | ||||||
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