Infineon Technologies
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图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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PTMA210452MV1 | Infineon Technologies | MOSFET RFP-LD 8 IC | ||||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
SPP35N10 | Infineon Technologies | PG-TO220-3-1 | MOSFET N-CH 100V 35A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU01N60C3 | Infineon Technologies | TO-251 | 1498 | MOSFET COOL MOS N-CH 650V 0.8A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU02N60C3 | Infineon Technologies | TO-252 | MOSFET COOL MOS PWR TRANS 650V 1.8A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU02N60S5 | Infineon Technologies | TO-251-3 | 1345 | MOSFET COOL MOS N-CH 600V 1.8A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU03N60C3 | Infineon Technologies | TO-251 | 1110 | MOSFET COOL MOS N-CH 600V 3.2A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU03N60S5 | Infineon Technologies | TO-252 | 215 | MOSFET COOL MOS N-CH 600V 3.2A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU04N60C3 | Infineon Technologies | PG-TO-251 | 1468 | MOSFET COOL MOS N-CH 650V 4.5A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU04N60S5 | Infineon Technologies | TO-252 | MOSFET COOL MOS N-CH 600V 4.5A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU07N60C3 | Infineon Technologies | TO-251 | 1677 | MOSFET COOL MOS N-CH 650V 7.3A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU07N60S5 | Infineon Technologies | PG-TO251-3-21 | MOSFET COOL MOS N-CH 600V 7.3A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPU09P06PL | Infineon Technologies | P-TO251-3-1 | MOSFET P-CH 60V 9.7A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,闸/源击穿电压:+/- 20 ... | ||||||
SPU18P06P | Infineon Technologies | PG-TO251-3 | MOSFET P-CH 60V 18.6A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,闸/源击穿电压:+/- 20 ... | ||||||
SPU30P06P | Infineon Technologies | PG-TO251-3 | MOSFET P-CH 60V 30A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,闸/源击穿电压:+/- 20 ... | ||||||
SPW07N60CFD | Infineon Technologies | TO-247 | 57 | MOSFET COOL MOS PWR TRANS 650V 0.7 Ohms | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPW11N60C3 | Infineon Technologies | TO-247 | MOSFET COOL MOS N-CH 600V 11A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPW11N60CFD | Infineon Technologies | TO-247 | MOSFET COOL MOS N-CH 650V 11A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:650 V,闸/源击穿电压:+/- 20 V... | ||||||
SPW11N60S5 | Infineon Technologies | TO-247 | MOSFET COOL MOS N-CH 600V 11A | |||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V... | ||||||
SPW11N80C3 | Infineon Technologies | TO-247 | 277 | MOSFET COOL MOS N-CH 800V 11A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V... | ||||||
SPW12N50C3 | Infineon Technologies | TO-247 | 122 | MOSFET COOL MOS N-CH 560V 11.6A | ||
参数:制造商:Infineon,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:560 V,闸/源击穿电压:+/- 20 V... |
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