Fairchild Semiconductor
|
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FQI17N40TU | Fairchild Semiconductor | MOSFET DISC BY MFG 2/02 | |||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,... | ||||||
|
|
FQI17P06TU | Fairchild Semiconductor | TO-262 | 739 | MOSFET -60V Single | |
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,... | ||||||
|
|
FQI17P10TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:- 100 V,闸/源击穿电压:+/-... | ||||||
|
|
FQI19N10LTU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 2... | ||||||
|
|
FQI19N10TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 2... | ||||||
|
|
FQI19N20CTU | Fairchild Semiconductor | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET N-CH/200V/19A/QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸... | ||||||
|
|
FQI19N20LTU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 2... | ||||||
|
|
FQI19N20TU | Fairchild Semiconductor | I2PAK(TO-262) | MOSFET 200V N-Channel QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸... | ||||||
|
|
FQI1P50TU | Fairchild Semiconductor | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET 500V P-Channel QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 500 V... | ||||||
|
FQI22N30TU | Fairchild Semiconductor | MOSFET DISC BY MFG 2/02 | |||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,... | ||||||
|
FQI26N03LTU | Fairchild Semiconductor | MOSFET | |||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,... | ||||||
|
|
FQI27N25TU | Fairchild Semiconductor | I2PAK(TO-262) | MOSFET 250V N-Channel QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:250 V,闸... | ||||||
|
FQI27N25TU_F085 | Fairchild Semiconductor | MOSFET 250V 0.11OHM 25.5A N-CH MOSFET | |||
| 参数:制造商:Fairchild Semiconductor,RoHS:是,包装形式:Tube,工厂包装数量:400,... | ||||||
|
|
FQI27P06TU | Fairchild Semiconductor | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET -60V Single | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 60 V,... | ||||||
|
|
FQI28N15TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:+/- 2... | ||||||
|
FQI2N30TU | Fairchild Semiconductor | I2PAK | MOSFET 300V N-Channel QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:300 V,闸... | ||||||
|
|
FQI2N80TU | Fairchild Semiconductor | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET 800V N-Channel QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸... | ||||||
|
|
FQI2N90TU | Fairchild Semiconductor | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET 900V N-Channel QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:900 V,闸... | ||||||
|
|
FQI2NA90TU | Fairchild Semiconductor | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET 900V N-Channel QFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:900 V,闸... | ||||||
|
|
FQI2P25TU | Fairchild Semiconductor | I2PAK(TO-262) | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 250 V... | ||||||
191/225 首页 上页 [186] [187] [188] [189] [190] [191] [192] [193] [194] [195] [196] 下页 尾页