Fairchild Semiconductor
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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HUF76139S3ST | Fairchild Semiconductor | TO-263AB | MOSFET USE 512-FDB8896 Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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HUF76143P3 | Fairchild Semiconductor | TO-220AB | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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HUF76143S3 | Fairchild Semiconductor | TO-262 | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
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HUF76143S3S | Fairchild Semiconductor | TO-263AB | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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HUF76143S3ST | Fairchild Semiconductor | TO-263AB | MOSFET USE 512-FDB8874 Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
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HUF76145P3 | Fairchild Semiconductor | TO-220AB | MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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HUF76145S3 | Fairchild Semiconductor | TO-262 | MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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HUF76145S3S | Fairchild Semiconductor | TO-263AB | MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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HUF76145S3ST | Fairchild Semiconductor | TO-263AB | MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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HUF76407D3 | Fairchild Semiconductor | TO-251 | MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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HUF76407D3S | Fairchild Semiconductor | TO-252AA | MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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HUF76407D3ST | Fairchild Semiconductor | TO-252-3，DPak（2 引线 + 接片），SC-63 | 2,500 | MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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HUF76407DK8T | Fairchild Semiconductor | 8-SOIC | MOSFET SO-8 | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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HUF76407P3 | Fairchild Semiconductor | TO-220-3 | MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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HUF76407P3_Q | Fairchild Semiconductor | TO-220AB | MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 16... | ||||||
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HUF76409D3 | Fairchild Semiconductor | TO-251 | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 16... | ||||||
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HUF76409D3S | Fairchild Semiconductor | TO-252 | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 16... | ||||||
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HUF76409D3ST | Fairchild Semiconductor | TO-252 | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 16... | ||||||
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HUF76409P3 | Fairchild Semiconductor | TO-220AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 16... | ||||||
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HUF76413D3 | Fairchild Semiconductor | TO-251 | MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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