Ixys
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IXGX55N120A3D1 | Ixys | PLUS247?-3 | IGBT 晶体管 IGBT | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
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IXGX60N60B2D1 | Ixys | PLUS247?-3 | IGBT 晶体管 60 Amps 600V 1.8 V Rds | ||
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:1.8 V,栅极/发射极最大电压:20 ... | ||||||
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IXGX60N60C2D1 | Ixys | PLUS247?-3 | IGBT 晶体管 60 Amps 600V 2.5 V Rds | ||
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:2.5 V,栅极/发射极最大电压:+/-... | ||||||
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IXGX72N60A3H1 | Ixys | PLUS247?-3 | IGBT 晶体管 75Amps 600V | ||
参数:制造商:IXYS,RoHS:是,... | ||||||
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IXGX72N60B3H1 | Ixys | PLUS247?-3 | IGBT 晶体管 72 Amps 600V | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:30,... | ||||||
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IXGX72N60C3H1 | Ixys | PLUS247?-3 | IGBT 晶体管 G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
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IXGY2N120 | Ixys | TO-252AA | IGBT 晶体管 2 Amps 1200V 3 Rds | ||
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱和电压:3 V,栅极/发射极最大电压:20 V... | ||||||
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IXDH20N120 | Ixys | TO-247AD | IGBT 晶体管 20 Amps 1200V | ||
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱和电压:2.4 V,栅极/发射极最大电压:+/... | ||||||
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IXDH20N120D1 | Ixys | TO-247AD | 264 | IGBT 晶体管 20 Amps 1200V | |
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱和电压:2.4 V,栅极/发射极最大电压:+/... | ||||||
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IXDH30N120 | Ixys | TO-247AD | IGBT 晶体管 30 Amps 1200V | ||
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱和电压:2.4 V,栅极/发射极最大电压:+/... | ||||||
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IXDH30N120D1 | Ixys | TO-247AD | 22 | IGBT 晶体管 30 Amps 1200V | |
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱和电压:2.4 V,栅极/发射极最大电压:+/... | ||||||
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IXDH35N60B | Ixys | TO-247AD | IGBT 晶体管 35 Amps 600V | ||
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:2.1 V,栅极/发射极最大电压:+/-... | ||||||
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IXDH35N60BD1 | Ixys | TO-247AD | IGBT 晶体管 35 Amps 600V | ||
参数:制造商:IXYS,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,集电极—射极饱和电压:2.1 V,栅极/发射极最大电压:+/-... | ||||||
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IXDN55N120D1 | Ixys | SOT-227B | IGBT 晶体管 55 Amps 1200V | ||
参数:制造商:IXYS,RoHS:是,配置:Single Dual Emitter,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱和电压:2.3 V,... | ||||||
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IXDN75N120 | Ixys | SOT-227B | 59 | IGBT 晶体管 75 Amps 1200V | |
参数:制造商:IXYS,RoHS:是,配置:Single Dual Emitter,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱和电压:2.2 V,... | ||||||
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MMIX4B20N300 | IXYS | 24-SMPD | 20 | IGBT F BRIDGE 3000V 34A 24SMPD | |
参数:IXYS|管件|BIMOSFET?|在售|-|全桥|3000 V|34 A|150 W|3.2V @ 15V,20A|-|-|标准|无|-55°C ~ 150°... | ||||||
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MMIX4G20N250 | IXYS | 24-SMPD | IGBT H BRIDGE 2500V 23A 24SMPD | ||
参数:IXYS|管件|-|在售|-|半桥|2500 V|23 A|100 W|3.1V @ 15V,20A|10 μA|1.19 nF @ 15 V|标准|无|-55... | ||||||
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MMIX4B22N300 | IXYS | 24-SMPD | IGBT TRANS 3000V 38A | ||
参数:IXYS|管件|BIMOSFET?|在售|-|全桥|3000 V|38 A|150 W|2.7V @ 15V, 22A|35 μA|2.2 nF @ 25 V|... | ||||||
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IXA20PG1200DHG-TRR | IXYS | ISOPLUS-SMPD?.B | IGBT H BRIDGE 1200V 32A SMPD | ||
参数:IXYS|卷带(TR)|-|在售|PT|半桥|1200 V|32 A|130 W|2.1V @ 15V,15A|125 μA|-|标准|无|-55°C ~ 15... | ||||||
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IXA40RG1200DHG-TRR | IXYS | ISOPLUS-SMPD?.B | IGBT H BRIDGE 1200V 63A SMPD | ||
参数:IXYS|卷带(TR)|ISOPLUS?|在售|PT|半桥|1200 V|63 A|230 W|2.15V @ 15V,35A|150 μA|-|标准|无|-5... |
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