Symbol符号 | Parameter 参数 | Value数值 | Units单位 |
VCBO | Collector-Base Voltage 集电极-基极电压 | -60 | V |
VCEO | Collector-Emitter Voltage 集电极-射极电压 | -50 | V |
VEBO | Emitter-Base Voltage 射极-基极电压 | -5 | V |
IC | Collector Current 集电极电流 | -150 | mA |
IB | Base Current 基极电流 | -50 | mA |
PC | Collector Power Dissipation 耗散功率 | 400 | mW |
TJ | Junction Temperature 结温 | 125 | ℃ |
TSTG | Storage Temperature 贮藏温度 | -65 ~ 150 | ℃ |
Symbol符号 | Parameter 参数 | Test Condition 测试条件 | Min 最小 | Typ 平均 | Max 最大 | Units 单位 |
BVCBO | Collector-Base Breakdown Voltage集电极-基极击穿电压 | IC= -100μA, IE=0 | -50 | - | - | V |
BVCEO | Collector-Emitter Breakdown Voltage集电极-发射极击穿电压 | IC= -10mA, IB=0 | -50 | - | - | V |
BVEBO | Emitter-Base Breakdown Voltage发射极-基极击穿电压 | IE= -10μA, IC=0 | -5 | - | - | V |
ICBO | Collector Cut-off Current 集电极截止电流 | VCB=60V, IE=0 | - | - | -0.1 | μA |
IEBO | Emitter Cut-off Current 射极 截止电流 | VEB=5V, IC=0 | - | - | -0.1 | μA |
hFE1 hFE2 | DC Current Gain直流电流增益 | VCE=6V, IC=2mA VCE=6V, IC=150mA | 70 25 | - | 400 | - |
VCE(sat) | Collector-Emitter Saturation Voltage集电极-发射极饱和电压 | IC=100mA, IB=10mA | - | -0.1 | -0.3 | V |
VBE (sat) | Base-Emitter Saturation Voltage 基极-射极饱和电压 | IC=100mA, IB=10mA | - | - | -1.1 | V |
fT | Current Gain Bandwidth Product 电流增益带宽 | VCE=10V, IC=1mA | 80 | - | - | MHz |
Cob | Output Capacitance 输出电容 | VCB=10V, IE=0, f=1MHz | - | 4.0 | 7.0 | pF |
NF | Noise Figure 噪声系数 | VCE=6V, IC=0.1mA RS=10kΩ, f=1Hz | - | 0.5 | 6.0 | db |
后缀符号 | O | Y | GR |
放大倍数 | 70-140 | 120-240 | 200-400 |
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